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A Development of Low-Temperature Silicon Oxidation Enhanced by Fluorine Catalysis

氟催化低温氧化硅的研究进展

基本信息

批准号：
60850061
负责人：
MORITA Mizuho
金额：
$ 6.08万
依托单位：
TOHOKU UNIVERSITY (1986)Hiroshima University (1985)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60850061/
关键词：
Low Temperature Oxidation Silicon Oxidation 弗素触媒光酸化

项目摘要

Low-temperature oxidation of silicon by using fluorine-enhanced oxidation is developed. The knowledge and results obtained through this research project are as follow: 1. A 50 A thick oxide layer is grown even at 400゜C for 30 min by fluorine-enhanced thermal oxidation using an <O_2> + <NF_3> gas mixture, when the <NF_3> concentration is about 10%.2. The enhancement of the oxidation rate originates in the catalytic effect of the fluorine radicals which enhance the oxidation reactions in the <SiO_2> -Si interface.3. An oxide layer of more than 60 A can be grown even at 400゜C for 20 min at <NF_3> concentration less than 0.5% under ArF excimer laser irradiation. Further lowering of the oxidation temperature to 300゜C would be possible in higher <NF_3> concentration range.4. Fluorine atoms incorporated in the oxide layer grown by the fluorine-enhanced oxidation are substituted by oxygen atoms through post-annealing in pure oxygen gas at the same temperature as oxidation, and can be effectively removed in wet oxygen.5. Annealing of the oxide in pure ammonia gas at the same temperature as oxidation results in the formation of nitrided oxide as a consequence that fluorine atoms incorporated in as-grown oxide are substituted by nitrogen atoms.6. The interface trap densities and the dielectric breakdown strength of the MOS structures are remarkably improved by the post-annealing in pure oxygen, wet oxygen, and pure ammonia gas.7. Thin gate oxide films with high-qualities can be formed by using an ultra clean oxidation technology. The interface trap densities of <SiO_2> -Si interface near midgap are of the order of <10^9> <cm^(-2)> <eV^(-1)> , and the dielectric breakdown strength of <SiO_2> is above 10 MV/cm.

研究了氟增强氧化法在硅低温氧化中的应用。通过本课题的研究，获得了以下认识和成果：1.当浓度约为10%时，通过使用+气体混合物的氟增强热氧化，即使在400 ℃下30分钟也生长50 A厚的氧化物层<O_2><NF_3><NF_3>。氧化速率的提高源于氟自由基对-Si界面氧化反应的催化作用<SiO_2>.在ArF准分子激光照射下，即使在400 ℃下20分钟，浓度小于0.5%，也可以生长大于60 A的氧化层<NF_3>。在更高的浓度范围内，氧化温度进一步降低到300 ° C是可能<NF_3>的。通过在与氧化相同的温度下在纯氧气中进行后退火，通过氟增强氧化生长的氧化物层中结合的氟原子被氧原子取代，并且可以在湿氧气中有效地去除。在与氧化相同的温度下在纯氨气中对氧化物进行退火导致形成氮化氧化物，这是由于结合在所生长的氧化物中的氟原子被氮原子取代。通过在纯氧、湿氧和纯氨气中进行后退火，MOS结构的界面陷阱密度和介质击穿强度得到显著提高.通过使用超清洁氧化技术，可以形成具有高质量的薄栅氧化膜。带<SiO_2>隙中部附近的-Si界面陷阱密度为<10 ^9> <cm^（-2）> <eV^（-1）>数量级，介电击穿强度<SiO_2>大于10 MV/cm。