A Development of Low-Temperature Silicon Oxidation Enhanced by Fluorine Catalysis

硅的低温度氧化物是通过使用荧光增强型氧化物开发出来的。通过这个研究项目获得的知识和结果将继续下去： 1。A 50一个较厚的氧化物层即使在400 ° C的温度下生长30分钟，如果使用+气体混合物进行荧光增强型热<O_2><NF_3>氧化，浓度<NF_3>约为10%。The enhancement of the oxidation rate originates in the catalytic effect of the fluorine radicals which enhance the oxidation reactions in the<SiO_2>-Si interface.3.一个超过60 A的氧化物层可以在400 ° C的浓度低于<NF_3>0.5%的ArF刺激激光辐射下的20分钟。进一步降低氧化温度至300 ° C可能在较高<NF_3>浓度范围内。Fluorine原子在氧化物层生长的过程中被Fluorine增强型氧化物取代的氧化物原子通过后退火在纯氧化气体在相同温度下进行纯氧化物气体，并可以有效地从湿氧化物中清除。在纯氨气体中的氧化物在相同的温度下被氧化的结果中的退火，即硝酸氧化物的形成是一个结果，即荧光原子在生长的氧化物被硝酸原子替代。2017年：界面陷阱密度和MOS结构的红外击穿强度被纯氧、湿氧和纯氨气体的后退火所显著改善。具有高质量的薄门氧化物薄膜可以通过使用超清洁氧化技术来制备。接口陷阱密度的<SiO_2>-硅接口附近的间隙为&lt;10^9&gt; &lt;cm^（-2）&gt; &lt;eV^（-1）&gt; ，而径向断裂强度高于<SiO_2>10 MV/cm。

Low-temperature oxidation of silicon by using fluorine-enhanced oxidation is developed. The knowledge and results obtained through this research project are as follow: 1. A 50 A thick oxide layer is grown even at 400゜C for 30 min by fluorine-enhanced thermal oxidation using an <O_2> + <NF_3> gas mixture, when the <NF_3> concentration is about 10%.2. The enhancement of the oxidation rate originates in the catalytic effect of the fluorine radicals which enhance the oxidation reactions in the <SiO_2> -Si interface.3. An oxide layer of more than 60 A can be grown even at 400゜C for 20 min at <NF_3> concentration less than 0.5% under ArF excimer laser irradiation. Further lowering of the oxidation temperature to 300゜C would be possible in higher <NF_3> concentration range.4. Fluorine atoms incorporated in the oxide layer grown by the fluorine-enhanced oxidation are substituted by oxygen atoms through post-annealing in pure oxygen gas at the same temperature as oxidation, and can be effectively removed in wet oxygen.5. Annealing of the oxide in pure ammonia gas at the same temperature as oxidation results in the formation of nitrided oxide as a consequence that fluorine atoms incorporated in as-grown oxide are substituted by nitrogen atoms.6. The interface trap densities and the dielectric breakdown strength of the MOS structures are remarkably improved by the post-annealing in pure oxygen, wet oxygen, and pure ammonia gas.7. Thin gate oxide films with high-qualities can be formed by using an ultra clean oxidation technology. The interface trap densities of <SiO_2> -Si interface near midgap are of the order of <10^9> <cm^(-2)> <eV^(-1)> , and the dielectric breakdown strength of <SiO_2> is above 10 MV/cm.