A STUDY OF ANALYSIS AND CONTROL OF SEMICONDUCTOR SURFACE REACTION BY SURFACE CARRIER CONDUCTION MODULATION

金属间隙半导体二极管结构已被制造，以证明在半导体表面的悬空键的终止可以通过观察表面状态的载流子的捕获和发射来分析。它已被证明，在半导体表面的悬挂键的终止水平可以通过测量高频电容-电压特性的二极管结构进行评估。高频电容-电压测量表明，硅表面的表面态密度反映了硅表面的工艺条件。此外，工艺决定MOS器件的性能已经确定。MOSFET器件的可靠性取决于预氧化物的质量，预氧化物在栅极氧化物形成过程中的温度上升期间生长在硅表面上。通过减薄预氧化层可以制造出高可靠性的MOSFET器件。金属（钨）-半导体（硅）接触的抗氧化性取决于从清洁硅表面到金属膜沉积期间在硅表面上生长的原生氧化物的量。可以通过抑制原生氧化物生长来形成低电阻接触。

Metal-gap-semiconductor diode structures have been fabricated to demonstrate that the termination of dangling bonds at semiconductor surfaces can be analyzed by observing capture and emission of carriers by surface states. It has been demonstrated that the termination level of dangling bonds at semiconductor surfaces can be evaluated by measuring high-frequency capacitance-voltage characteristics of the diode structure. The high-frequency capacitance-voltage measurements of metal-gap-semiconductor diode structures with hydrogen-terminated and oxygen-terminated silicon surfaces indicate that the surface state density reflects process conditions of silicon surfaces. Furthermore, process determining MOS device performances have been ascertained. The reliability of MOSFET devices depends on the quality of the preoxide which is grown on the silicon surface during the temperature ramp-up in the gate oxide formation process. High reliable MOSFET devices can be fabricated by thinning the preoxide. The contac resistance of metal(tungsten)-semiconductor(silicon) contacts depends on the amount of native oxide grown on the silicon surface during from cleaning the silicon surface to the metal film deposition. The low resistance contacts can be formed by suppressing the native oxide growth.