Crystal of growth of compound semiconductor lattice-matched with Si substrate

我们使用金属有机物气相外延在一小部分Si衬底上获得了高质量的GaP层。研究了在硅衬底上全表面生长高质量GaP层的生长条件。三乙基镓和PHs被用作源材料。使用Nomarski显微镜和原子力显微镜观察表面形貌。在700 ~ 830℃范围内，随着温度的升高，表面形貌得到改善。在优化的生长条件下，在GaP层的整个表面上获得指示高质量层的交叉阴影图案。高温生长导致改进的层。我们研究了生长初期的GaP结构。随着温度的升高，岛密度增加，岛尺寸减小。在优化的生长条件下，岛密度较高。因此，岛聚结发生迅速，导致低于临界层thick.We层研究InP点GaP衬底上使用金属有机物气相外延。衬底温度在440 - 540℃之间变化。随着InP生长温度的降低，点密度增加。最大点密度为3 × 10^（10）cm^（-2）。在540℃时，随着PH_3流量的减小，墨点密度增大。这种趋势是难以解释的解决表面迁移的In原子。降低PH_3流量可降低点的表面能。

We obtained a high-quality GaP layer on a fraction of a Si substrate using metalorganic vapor phase epitaxy. We studied on growth conditions for a high-quality GaP layer on the whole surface of a Si substrate. Triethygallium and PHs were used as source materials. Surface morphology was observed using Nomarski microscope and atomic force microscopy. Surface morphology improved with increase in temperature between 700 and 830℃. Under the optimized growth conditions, a cross-hatched pattern that indicated a high-quality layer, was obtained on the whole surface of a GaP layer. High-temperature growth resulted in improved layers. We investigated GaP structure at the initial growth stage. Island density increased and island size decreased with increasing temperature. Under the optimized growth conditions, the island density was high. Therefore, island coalescence occurred quickly, leading to a layer below a critical layer thickness.We investigated InP dots on GaP substrates using metalorganic vapor phase epitaxy. The substrate temperature was varied between 440 and 540℃. The dot density increased with decreasing temperature of InP growth. The maximum dot density was 3 × 10^(10) cm^(-2). At 540℃, the dot density increased with decrease in PH3 flow rate. This tendency is difficult to be explained by addressing surface migration of In atoms. Surface energy of dots might decrease by decreasing PH3 flow rate.