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Fabrication of red light-emitting devices using the rare-earth doped nitride semiconductors and the elucidation of luminescence mechanism

Fabrication of red light-emitting devices using the rare-earth doped nitride semiconductors and the elucidation of luminescence mechanism
稀土掺杂氮化物半导体红色发光器件的制备及发光机理的阐明
批准号:
21760007
负责人:
NISHIKAWA Atsushi
金额:
$2.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2010

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中文摘要
翻译
我们已经成功地用有机金属气相外延生长出了掺eu的GaN层,并首次演示了从掺eu的GaN LED中注入电流发射红光的操作。我们发现生长温度和压力对Eu发光强度有很强的影响。结果表明,光输出功率提高了17 μW。
英文摘要
We have succeeded in the growth of Eu-doped GaN layer grown by organometallic vapor phase epitaxy and demonstrated the first operation of current-injected red emission from a Eu-doped GaN LED. We have found strong influence of growth temperature and pressure on Eu luminescence intensity. As a result, improved light output power of 17 μW was achieved.
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会议论文
DOI: 10.1016/j.optmat.2010.10.010
发表时间: 2011-05-01
期刊: OPTICAL MATERIALS
影响因子: 3.9
作者: [Nishikawa, A., Furukawa, N., Fujiwara, Y.]
通讯作者: Fujiwara, Y.
Eu添加GaNにおけるMg共添加によるEu発光強度の増大
Eu 掺杂 GaN 中的 Mg 共掺杂提高了 Eu 发射强度
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [李東建, 西川敦, 古川直樹, 川〓昂佑, 寺井慶和, 藤原康文]
通讯作者: 藤原康文
Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature
有机金属气相外延生长Eu掺杂GaN及其在室温红色发光二极管中的应用
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [Y.Fujiwara, A.Nishikawa, Y.Terai]
通讯作者: Y.Terai
DOI: 10.1002/pssa.201000598
发表时间: 2011-02-01
期刊: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
影响因子: 2
作者: [Furukawa, Naoki, Nishikawa, Atsushi, Fujiwara, Yasufumi]
通讯作者: Fujiwara, Yasufumi
36
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    • 项目类别:
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