Use of carbon nanocoil as catalyst support for development of high-performance fuel cell
Use of carbon nanocoil as catalyst support for development of high-performance fuel cell
批准号:
22760208
负责人:
SUDA Yoshiyuki
金额:
$2.58万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011
中文摘要
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英文摘要
When carbon nanocoils(CNCs) are used in fuel cell electrodes, the diffusion of fuel and gas, and the removal of reaction products, becomes considerably smoother. In this research project, I used CNC as an anode or cathode catalyst support material in direct methanol fuel cells(DMFCs). Other carbon nanoparticles, Arc-Black(AcB) and Vulcan, were also used as catalyst supports to compare with the CNCs. Compared with the catalyst layers of AcB and Vulcan, the catalyst layer of CNCs was confirmed to have several voids. As for the anode catalysts, the voltages of the PtRu/CNC and PtRu/Vulcan became almost the same at a high current density. As for the cathode catalysts, the power density of Pt/CNC was 1. 2 times higher than that of Pt/Vulcan and 1. 6 times higher than that of Pt/AcB. These results clearly show that CNC is a good catalyst support for fuel cell.
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Removal of diamond-like carbon film by oxygen-dominated plasma beam converted from filtered carbon-cathodic arc
过滤碳阴极电弧转化的氧主导等离子束去除类金刚石碳膜
DOI:
--
发表时间:
2011
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[H. Tanoue, M. Kamiya, Y. Suda, S. Oke, H. Takikawa, Y. Hasegawa, M. Taki, N. Tsuji, T. Ishikawa, H. Yasui]
通讯作者:
H. Yasui
高品質DLC膜形成に向けた真空アークプラズマビームの制御
真空电弧等离子束控制可形成高质量 DLC 薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Shinichiro MUROOKA, Keisuke TOMODA, Nobukazu HOSHI, Junnosuke HARUNA, Meifen CAO, Atsuhiro YOSHIZAKI and Keiichi HIRATA, 滝川浩史]
通讯作者:
滝川浩史
フィルタードアーク蒸着法で形成したDLC膜の膜質に及ぼす基板バイアスの影響
基底偏压对过滤电弧蒸镀法形成DLC膜膜质量的影响
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Qi Zhang, Xiangdong Sun, Yanru Zhong, Biying Ren and Mikihiko Matsui, 柏木大幸]
通讯作者:
柏木大幸
真空アークプラズマを用いたDLC:Si:H膜の合成
采用真空电弧等离子体合成 DLC:Si:H 薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[加藤, 佐野, 鈴置, 須藤利文, 田上英人]
通讯作者:
田上英人
水素フリーダイヤモンドライクカーボン膜の半導体性評価
无氢类金刚石碳膜的半导体性能评价
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Miya Amada, Naoya Miyamoto, Takehiro Enomoto, Norimasa Tanabe, Junichi Asama, Akira Chiba, Tadashi Fukao, Satoru Iwasaki, and Masatsugu Takemoto, 田上英人,柏木大幸,奥田浩史,角口公章,須田善行,滝川浩史,神谷雅男,瀧真,長谷川祐史,辻信広,石川剛史]
通讯作者:
田上英人,柏木大幸,奥田浩史,角口公章,須田善行,滝川浩史,神谷雅男,瀧真,長谷川祐史,辻信広,石川剛史
共 125 条
Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy Method
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批准号:25630123
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:SUDA Yoshiyuki
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依托单位:
Observation of electromagnetic induction phenomena of a nanometer-scale coil
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批准号:25630110
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:SUDA Yoshiyuki
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依托单位:
Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy Method
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批准号:23656210
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.5万
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财政年份:2011
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负责人:SUDA Yoshiyuki
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依托单位:
High-Density New Two-Terminal Resistive Nonvolatile Memory Using SiC and Its Integration Technology
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批准号:21360164
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.4万
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财政年份:2009
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负责人:SUDA Yoshiyuki
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依托单位:
High-Density New Two-Terminal Resistive Nonvolatile MemoryUsing Silicon Carbide
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批准号:19360156
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.9万
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财政年份:2007
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负责人:SUDA Yoshiyuki
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依托单位:
Selective growth of metallic/semiconducting single-walled carbon nanotubes by precise supply control of chemically active species
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批准号:19740339
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.25万
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财政年份:2007
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负责人:SUDA Yoshiyuki
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依托单位:
Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated Technology
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批准号:14350179
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.22万
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财政年份:2002
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负责人:SUDA Yoshiyuki
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依托单位:
Si/SiGe Multiple-Quantum-well Resonant Tunneling Device
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批准号:12450141
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.74万
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财政年份:2000
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负责人:SUDA Yoshiyuki
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依托单位:
Sub-Atomic-Layr Epitaxy of Si/Ge Semiconductors
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批准号:08650369
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.22万
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财政年份:1996
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负责人:SUDA Yoshiyuki
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依托单位:
Study on electron-beam-induced excitation on Si surfaces
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批准号:04650259
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1992
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负责人:SUDA Yoshiyuki
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依托单位:
海外基金