权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Si/SiGe Multiple-Quantum-well Resonant Tunneling Device

Si/SiGe多量子阱谐振隧道器件

基本信息

批准号：
12450141
负责人：
SUDA Yoshiyuki
金额：
$ 7.74万
依托单位：
Tokyo University of Agriculture & Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450141/
关键词：
SiGe RTD Resonant Tunneling Diode High Speed Device Strain Relief Relaxed Buffer PVCR Triple Barrier PVR

项目摘要

Resonant tunneling devices. Have been categorized into one of the highest speed devices which surpass 2D devices, such as HEMT and MODFET, and JJ devices, and have been expected to meet the demand for high speed operations from GHz to THz. So far, the tunneling devices have been applied to III-V material systems with which high tunneling barriers are obtained. If Si/SiGe tunneling devices are realized, we can expand a new Si-based ultra-high speed integration device system. However, the peak-to-valley current ratio (PVCR), in the negative differential resistance (NDR) region of, the I-V curve, as a figure of merit, has been low and 1.2 at RT since the first report of a Si/SiGe RTD in 1988. On the basis of the theoretical analysis, we have applied for the first time a combination of electron tunneling and a multiple quantum well to a Si/SiGe RTD and have succeeded in enhancing the PVCR value of a Si/SiGe RTD and obtaining a PVCR value of more than 7.6 in 1998. In this work, we have further investigated the RTD device structure and process to enhance the NDR effect. As a result, we have found that the surface crystalline quality of a strain-relief buffer largely affects the NDR performance, and have proposed an annealed thin two-layer buffer and an annealed thin multi-layer buffer, which has a thin SiGe layer with a high concentration of Ge. The proposed buffers exhibit surfaces with high crystallin quality. By introducing the high crystalline quality buffer to a electrontunneling multiple-well RTD, we have succeeded in realizing a PVCR value of more than 180 at RT which is comparable to or more than those of III-V RTDs. This result indicates the important device physics of very low inelastic scattering in SiGe RTDs. Through this research, it has' been demonstrated that the PVCR performance comparable to those of III-V RTDs has been obtained by the use of SiGe materials, which gives a great motive force to further extend Si/SiGe tunneling devices.

共振隧穿装置。已被归类为超过2D器件的最高速度器件之一，如HEMT和MODFET，以及JJ器件，并有望满足从GHz到THz的高速操作需求。到目前为止，隧穿器件已经应用于III-V材料系统，利用该III-V材料系统获得高隧穿势垒。如果实现Si/SiGe隧穿器件，我们可以扩展一个新的硅基超高速集成器件系统。然而，自1988年首次报道Si/SiGe RTD以来，I-V曲线的负微分电阻（NDR）区域中的峰谷电流比（PVCR）作为品质因数一直很低，在RT下为1.2。在理论分析的基础上，我们首次将电子隧穿和多量子阱相结合应用于Si/SiGe RTD，成功地提高了Si/SiGe RTD的PVCR值，并于1998年获得了大于7.6的PVCR值。在这项工作中，我们进一步研究了RTD器件的结构和工艺，以提高NDR效应。结果，我们发现应变释放缓冲层的表面结晶质量在很大程度上影响了NDR性能，并提出了退火薄双层缓冲层和退火薄多层缓冲层，其具有高浓度Ge的薄SiGe层。所提出的缓冲液具有高晶体蛋白质量的表面。通过将高结晶质量缓冲层引入到电子隧穿多阱RTD中，我们成功地实现了在RT下超过180的PVCR值，这与III-V RTD相当或更高。这一结果表明了SiGe RTD中非常低的非弹性散射的重要器件物理特性。通过这项研究，证明使用SiGe材料可以获得与III-V RTD相当的PVCR性能，这为进一步扩展Si/SiGe隧道器件提供了巨大的动力。