Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated Technology

Si/SiGe多势垒谐振隧道二极管及其集成技术

基本信息

项目摘要

The head investigator has succeeded in fabricating a Si/SiGe resonant tunneling diode(RTD) which exhibits a peak-to-valley current ratio of as high as 7.6 in 1998 by applying a combination of electron tunneling and a multiple well structure on the basis of theoretical calculation. Further, we have proposed a thin double-layer strain-relaxed buffer as important technology for the electron-tunneling Si/SiGe RTD fabrication and have obtained a PVCR value of as high as〜180.In this work, in order to realize quantum-effect high-speed Si-system devices, on the basis of these achievements, we aimed at establishing electron-tunneling Si/SiGe RTD device technology and basic technology for the device integration.First, we have cleared the strain-relaxation mechanisms for the thin double-layer strain-relaxed buffer and its fabrication conditions. The 1st buffer layer grows coherently, however, upon 10-nm 2nd buffer layer growth, the 1st layer relaxes and the surface threading dislocation remains l … More ow. Thus, we have cleared that the 2nd buffer layer relaxes the 1st buffer layer and restrains the threading dislocations form propagating to the surface. On the basis of the results, we have further proposed a thin triple-layer buffer with which the positions of the lattice mismatch dislocation can be better controlled. We have cleared the fabrication principle and conditions. With the thin triple-layer buffer, we have a strain-relaxed buffer with high crystallinity and high relaxation rate, and have succeeded in fabricating high performance Si/SiGe RTD, the PVCR of which surpasses III-V RTDs. With these experimental results, we demonstrate that Si/SiGe quantum well tunneling structures are very useful as a practical device. Further, as basic integration technology, we have developed current density control method and device isolation technology.Through these works, we have cleared the Si/SiGe RTD device construction technology and the basic integration technology such as device current control and device isolation technology. In this project, we have achieved the technological fundamentals for Si/SiGe electron-tunneling RTD device technology. Less
1998年,首席研究员成功地制造了Si/SiGe共振隧穿二极管(RTD),该二极管在理论计算的基础上,通过应用电子隧穿和多阱结构的组合,表现出高达7.6的峰谷电流比。在此基础上,我们提出了一种薄的双层应变弛豫缓冲层作为电子隧穿Si/SiGe RTD的重要制作技术,并获得了高达180的PVCR值。为了实现量子效应的高速Si系器件,在此基础上,我们旨在建立电子隧穿Si/SiGe RTD器件技术和器件集成的基础技术。我们已经明确了薄双层应变弛豫缓冲层的应变弛豫机制及其制造条件。第一层缓冲层是共格生长的,然而,在10-nm的第二层缓冲层生长时,第一层弛豫,并且表面穿透位错仍然存在。 ...更多信息 哦因此,我们已经清楚,第二缓冲层弛豫的第一缓冲层,并限制了线程位错传播到表面。在此基础上,我们进一步提出了一种薄的三层缓冲层,它可以更好地控制晶格失配位错的位置。我们已经明确了制造原则和条件。利用薄的三层缓冲层,我们获得了高结晶度和高弛豫速率的应变弛豫缓冲层,并成功地制备了高性能的Si/SiGe RTD,其PVCR超过了III-V RTD。这些实验结果表明,Si/SiGe量子阱隧穿结构是非常有用的,作为一个实用的器件。在此基础上,提出了电流密度控制方法和器件隔离技术,明确了Si/SiGe RTD器件的构建技术和器件电流控制、器件隔离技术等基本集成技术。在本计画中,我们已达成矽/矽锗电子穿隧式热电阻器之技术基础。少

项目成果

期刊论文数量(66)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
High PVCR Si/Si_<1-x>Ge_x DW RTD Formed with New Triple-Layer Buffer
采用新型三层缓冲器形成的高 PVCR Si/Si_<1-x>Ge_x DW RTD
Si Submonolayer and Monolayer Digital Growth Operation Technique Using Si_2H_6 as Atomically Controlled Growth Nanotechnology
以Si_2H_6作为原子控制生长纳米技术的Si亚单层和单层数字生长操作技术
  • DOI:
  • 发表时间:
    2003
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Y.Suda;N.Hosoya;K.Miki
  • 通讯作者:
    K.Miki
半導体薄膜製造方法
半导体薄膜的制造方法
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
High PVCR Sil-xGex/Si Electron-Tunneling RTD Using Multiple-Well and Annealed Thin Double-Layer Buffer
使用多孔和退火薄双层缓冲器的高 PVCR Sil-xGex/Si 电子隧道 RTD
Y.Suda, A.Meguro, H.Maekawa: "High PVCR Si1-xGex/Si Electron-Tunneling RTD Using Multiple-Well and Annealed Thin Double-Layer Buffer"Electrochemical Society Proceedings Volume. (in press). (2002)
Y.Suda、A.Meguro、H.Maekawa:“使用多井和退火薄双层缓冲器的高 PVCR Si1-xGex/Si 电子隧道 RTD”电化学会论文集卷。
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    0
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SUDA Yoshiyuki其他文献

SUDA Yoshiyuki的其他文献

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{{ truncateString('SUDA Yoshiyuki', 18)}}的其他基金

Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy Method
溅射外延法在Si上直接生长Ge平膜形成Ge虚拟衬底技术
  • 批准号:
    25630123
  • 财政年份:
    2013
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Observation of electromagnetic induction phenomena of a nanometer-scale coil
纳米级线圈电磁感应现象的观察
  • 批准号:
    25630110
  • 财政年份:
    2013
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy Method
磷表面活性剂溅射外延法在硅上直接形成Ge平膜技术
  • 批准号:
    23656210
  • 财政年份:
    2011
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Use of carbon nanocoil as catalyst support for development of high-performance fuel cell
使用碳纳米线圈作为催化剂载体开发高性能燃料电池
  • 批准号:
    22760208
  • 财政年份:
    2010
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
High-Density New Two-Terminal Resistive Nonvolatile Memory Using SiC and Its Integration Technology
采用SiC的高密度新型两端电阻式非易失性存储器及其集成技术
  • 批准号:
    21360164
  • 财政年份:
    2009
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
High-Density New Two-Terminal Resistive Nonvolatile MemoryUsing Silicon Carbide
采用碳化硅的高密度新型两端电阻式非易失性存储器
  • 批准号:
    19360156
  • 财政年份:
    2007
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Selective growth of metallic/semiconducting single-walled carbon nanotubes by precise supply control of chemically active species
通过化学活性物质的精确供应控制选择性生长金属/半导体单壁碳纳米管
  • 批准号:
    19740339
  • 财政年份:
    2007
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Si/SiGe Multiple-Quantum-well Resonant Tunneling Device
Si/SiGe多量子阱谐振隧道器件
  • 批准号:
    12450141
  • 财政年份:
    2000
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Sub-Atomic-Layr Epitaxy of Si/Ge Semiconductors
Si/Ge 半导体的亚原子层外延
  • 批准号:
    08650369
  • 财政年份:
    1996
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on electron-beam-induced excitation on Si surfaces
硅表面电子束诱导激发研究
  • 批准号:
    04650259
  • 财政年份:
    1992
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

COLLABORATIVE RESEARCH: Modeling, Simulation, Circuit Design, Logic Synthesis, Testing and Defect Tolerance of Resonant Tunneling Device Based Nanotechnology
合作研究:基于纳米技术的谐振隧道器件的建模、仿真、电路设计、逻辑综合、测试和缺陷容限
  • 批准号:
    0429745
  • 财政年份:
    2004
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Continuing Grant
COLLABORATIVE RESEARCH: Modeling, Simulation, Circuit Design, Logic Synthesis, Testing and Defect Tolerance of Resonant Tunneling Device Based Nanotechnology
合作研究:基于纳米技术的谐振隧道器件的建模、仿真、电路设计、逻辑综合、测试和缺陷容限
  • 批准号:
    0429265
  • 财政年份:
    2004
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Continuing Grant
Fabrication of epitaxial, magnetic multiple-barrier-structures and development of spin-resonant-tunneling -device basic technology
外延磁性多势垒结构制备及自旋谐振隧道器件基础技术开发
  • 批准号:
    16360143
  • 财政年份:
    2004
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Design of a superlattice-based resonant-tunneling-device for phonons
基于超晶格的声子谐振隧道装置的设计
  • 批准号:
    13650001
  • 财政年份:
    2001
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Si/SiGe Multiple-Quantum-well Resonant Tunneling Device
Si/SiGe多量子阱谐振隧道器件
  • 批准号:
    12450141
  • 财政年份:
    2000
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Research Initiation: High-Frequency Resonant-Tunneling Device Employing Metal Multilayers
研究启动:采用金属多层膜的高频谐振隧道器件
  • 批准号:
    8506823
  • 财政年份:
    1985
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Standard Grant
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