Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated Technology

1998年，在理论计算的基础上，采用电子隧穿与多阱结构相结合的方法，成功制备出峰谷电流比高达7.6的Si/SiGe谐振隧道二极管（RTD）。此外，我们提出了一种薄的双层应变松弛缓冲器作为电子隧穿Si/SiGe RTD制造的重要技术，并获得了高达~ 180的PVCR值。在本工作中，为了实现量子效应的高速Si系统器件，在这些成果的基础上，我们旨在建立电子隧穿Si/SiGe RTD器件技术和器件集成的基础技术。首先，明确了薄双层应变松弛缓冲层的应变松弛机理及其制备条件。第1缓冲层生长一致，但第2缓冲层生长到10 nm时，第1层松弛，表面螺纹位错保持在1…因此，我们已经清除了第2缓冲层松弛第1缓冲层并限制螺纹位错形式传播到表面。在此基础上，我们进一步提出了一种可以更好地控制晶格错配位错位置的薄三层缓冲层。我们已经明确了制造原理和条件。利用薄三层缓冲液，我们获得了一种具有高结晶度和高弛豫率的应变松弛缓冲液，并成功制备了高性能Si/SiGe RTD，其PVCR超过III-V RTD。通过这些实验结果，我们证明了Si/SiGe量子阱隧道结构作为一种实用的器件是非常有用的。此外，作为基础集成技术，我们开发了电流密度控制方法和器件隔离技术。通过这些工作，我们明确了Si/SiGe RTD器件构建技术和器件电流控制、器件隔离技术等基本集成技术。本课题实现了Si/SiGe电子隧穿RTD器件技术的技术基础。少

The head investigator has succeeded in fabricating a Si/SiGe resonant tunneling diode(RTD) which exhibits a peak-to-valley current ratio of as high as 7.6 in 1998 by applying a combination of electron tunneling and a multiple well structure on the basis of theoretical calculation. Further, we have proposed a thin double-layer strain-relaxed buffer as important technology for the electron-tunneling Si/SiGe RTD fabrication and have obtained a PVCR value of as high as〜180.In this work, in order to realize quantum-effect high-speed Si-system devices, on the basis of these achievements, we aimed at establishing electron-tunneling Si/SiGe RTD device technology and basic technology for the device integration.First, we have cleared the strain-relaxation mechanisms for the thin double-layer strain-relaxed buffer and its fabrication conditions. The 1st buffer layer grows coherently, however, upon 10-nm 2nd buffer layer growth, the 1st layer relaxes and the surface threading dislocation remains l … More ow. Thus, we have cleared that the 2nd buffer layer relaxes the 1st buffer layer and restrains the threading dislocations form propagating to the surface. On the basis of the results, we have further proposed a thin triple-layer buffer with which the positions of the lattice mismatch dislocation can be better controlled. We have cleared the fabrication principle and conditions. With the thin triple-layer buffer, we have a strain-relaxed buffer with high crystallinity and high relaxation rate, and have succeeded in fabricating high performance Si/SiGe RTD, the PVCR of which surpasses III-V RTDs. With these experimental results, we demonstrate that Si/SiGe quantum well tunneling structures are very useful as a practical device. Further, as basic integration technology, we have developed current density control method and device isolation technology.Through these works, we have cleared the Si/SiGe RTD device construction technology and the basic integration technology such as device current control and device isolation technology. In this project, we have achieved the technological fundamentals for Si/SiGe electron-tunneling RTD device technology. Less