Study on electron-beam-induced excitation on Si surfaces

硅表面电子束诱导激发研究

• 批准号: 04650259
• 负责人: SUDA Yoshiyuki
• 金额: $ 1.28万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650259/
• 关键词: atomic layr epitaxy; silicon; disilane; laser-induced excitation; electron-beam-induced excitation; digital epitaxy; surface migration; surface excitation reaction; 原子層エピタキシー; ディジタルエピタキシー; 原子層エピキタキシー; 表面励起; 反射型高速電子線回折; ディジタル成長

This research aims at investigating atomic-scale crystal growth techniques for IV group semiconductors which are to be necessary for creating the next-generation semiconductor devices with ultra-fine structures. Final goal of this research is to clear the reaction mechanisms of electron-beam-induced excitation of a Si_2H_6/Si (001) system and apply this electron-beam irradiation method to atomic-scale crystal growth. The head investigator has already indicated the possibility of atomic-scale crystal growth with this system from his early research.In the first stage of this research, the reaction mechanisms of thermal excitation were investigated, which provide fundamental processes necessary for exploring of a new crystal growth technique. As a result, relations between adsorption reaction, pyrolysis reaction of adsorbates, surface migration reaction of adsorbates, and epitaxial growth reaction have been clearly understood in the wide range of growth temperature and Si_2H_6 pressure. T … More hese results should give important and fundamental knowledge to understand the surface reaction mechanisms of IV group semiconductors and to expand crystal growth technologies.On the basis of this research, a sub-monolayr-by-sub-monolayr digital epitaxial growth technique of Si has been proposed, and multilayr Si films have been successfully grown with this technique. This technique is named Sub-Atomic-Layr Epitaxy. The results has been published in international conferences of IUMRS (Tokyo, 1993) and so on.Through the above research, relations between desorption mechanism of hydrogen, surface adatom migration mechanisms, and epitaxial growth mechanisms have been well understood. These mechanisms suggest the direction of coming research on atomic-scale digital epitaxy.In the final stage of this research, electron-induced desorption of hydrogen from Si_2H_6・adsorbed Si surfaces was tried on the basis of the above knowledge. The hydrogen desorption is a key process for atomic-scale digital epitaxy. To accomplish the experiment, a new system has been successfully constructed where both of electron-beam and Si_2H_6 gas are able to be simultaneously introduced on the surface. With this system, the promotion of Si growth and hydrogen desorption by the electron-beam irradiation has been confirmed. This research indicates a clue to apply the surface excitation method by electron-beam irradiation to next epitaxial growth technologies. Less

本研究旨在研究 IV 族半导体的原子级晶体生长技术，这对于制造具有超精细结构的下一代半导体器件是必要的。本研究的最终目标是阐明Si_2H_6/Si(001)体系电子束诱导激发的反应机理，并将这种电子束辐照方法应用于原子级晶体生长。首席研究员在早期研究中就已经表明了利用该系统生长原子级晶体的可能性。在本研究的第一阶段，研究了热激发的反应机理，为探索新的晶体生长技术提供了必要的基础过程。结果表明，在较宽的生长温度和Si_2H_6压力范围内，吸附反应、吸附物热解反应、吸附物表面迁移反应和外延生长反应之间的关系得到了清晰的认识。这些结果为理解IV族半导体的表面反应机制和拓展晶体生长技术提供了重要的基础知识。在此研究的基础上，提出了一种逐单层硅数字外延生长技术，并利用该技术成功生长了多层硅薄膜。该技术称为亚原子层外延。该成果已发表在IUMRS（Tokyo，1993）等国际会议上。通过上述研究，人们对氢的解吸机制、表面吸附原子迁移机制和外延生长机制之间的关系有了很好的了解。这些机理为原子级数字外延的研究方向指明了方向。在本研究的最后阶段，基于上述知识，尝试了电子诱导氢从Si_2H_6·吸附的Si表面脱附。氢解吸是原子级数字外延的关键过程。为了完成实验，成功构建了一个新系统，可以将电子束和Si_2H_6气体同时引入表面。通过该系统，电子束照射促进了Si生长和氢脱附。该研究为电子束辐照表面激发方法应用于下一代外延生长技术提供了线索。较少的

项目成果

Masahiro Ishida: "Sub-atomic-layer epitaxy of Si" Proceedings of the 45th symposium on semiconductons and Integrated Circuits Technology. 112-117 (1993)

Masahiro Ishida：“Si 的亚原子层外延”第 45 届半导体和集成电路技术研讨会论文集。

Y.Suda, M.Ishida, M.Yamashita, and H.Ikeda: "Sub-atomic-layr epitaxy of Si using Si_2H_6" Appl.Surf.Sci.(in press). (1994)

Y.Suda、M.Ishida、M.Yamashita 和 H.Ikeda：“使用 Si_2H_6 进行 Si 的亚原子层外延”Appl.Surf.Sci.（出版中）。

Yoshiyuki Suda: "Sub-atomic-layer epitaxy of Si using Si_2H_6" Proceedings IUMRS-ICAM-93. (in press). (1994)

Yoshiyuki Suda：“使用 Si_2H_6 进行 Si 的亚原子层外延”论文集 IUMRS-ICAM-93。

Y.Suda,M Shirahama,and M.Ishida: "Sub-atomic-layer epitaxy of Si using Si_2H_6" Proceedings 3rd IUMRS Int.Conf. on Advanced Materials,ed.by S.Somiya,M.Doyama,M.Hasegawa,and S.Yamada (Elsevier,Amsterdam,1994). (in press). (1994)

Y.Suda、M Shirahama 和 M.Ishida：“使用 Si_2H_6 进行 Si 的亚原子层外延”论文集第 3 届 IUMRS Int.Conf。

Y.Suda, M.Shirahama, and M.Ishida: "Sub-atomic-layr epitaxy of Si using Si_2H_6" Proceedings 3rd IUMRS Int.Conf.on Advanced Materials.ed.by S.Somiya, M.Doyama, M.Hasegawa, and S.Yamada (Elsevier, Amsterdam). (in press). (1994)

Y.Suda、M.Shirahama 和 M.Ishida：“使用 Si_2H_6 进行 Si 的亚原子层外延”论文集第三届 IUMRS Int.Conf.on Advanced Materials.ed.by S.Somiya、M.Doyama、M.Hasekawa