Research on low spin-damping magnetic materials for the power-efficient spin-controlled devices

用于高效自旋控制器件的低自旋阻尼磁性材料研究

• 批准号: 23560384
• 负责人: TAKAHASHI Yutaka
• 金额: $ 3.33万
• 依托单位: Yamagata University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560384/
• 关键词: スピントロニクス; 磁気記録; 強磁性共鳴; 磁気緩和係数; 3d強磁性遷移金属; rfマグネトロンスパッタリング; 強磁性共鳴測定; 3d遷移金属; RFマグネトロンスパッタリング

Spin damping is an important phenomenon which affects the speed of hard disk drives and the power consumption of spin-memory devices under development. Understanding its physical origin is mandatory for the material design of these devices. We have investigated the spin (Gilbert) damping coefficients of Fe thin films with dilute concentrations of Co or Ni, which are 3d transition metals and are widely-used magnetic materials. The films were fabricated in high-vacuum and later some of them were annealed to improve the crystallinity. The Gilbert damping coefficients were measured by the ferromagnetic resonance spectroscopy. It is found that the damping coefficients reduce slightly after annealing. It is theoretically anticipated that the spin damping depends on the scattering rate of electrons in metals. Our findings infer that damping of the films reduces because the scattering rate lowers as the crystallinity improves.

自旋阻尼是影响硬盘驱动器速度和正在开发的自旋存储设备功耗的重要现象。了解其物理起源对于这些设备的材料设计是必须的。我们研究了含有稀浓度 Co 或 Ni 的 Fe 薄膜的自旋（吉尔伯特）阻尼系数，它们是 3d 过渡金属，是广泛使用的磁性材料。这些薄膜在高真空下制造，随后对其中一些薄膜进行退火以提高结晶度。吉尔伯特阻尼系数通过铁磁共振波谱测量。发现退火后阻尼系数略有降低。理论上预计自旋阻尼取决于金属中电子的散射率。我们的研究结果推断，薄膜的阻尼会降低，因为散射率随着结晶度的提高而降低。

项目成果

Ferromagnetic Resonance Study of Fe_100-<i>x</i>Co_<i>x</i>/GaAs(001) (<i>x</i> &lt; 11) Deposited by RF Magnetron Sputtering

Fe_100-<i>x</i>Co_<i>x</i>/GaAs(001) (<i>x</sub>) 的铁磁共振研究

• DOI: 10.3379/msjmag.1212r003
• 发表时间: 2013
• 期刊: Journal of the Magnetics Society of Japan
• 作者: Tatsuya Omori;Shinichiro Nishiuma;Ken Seo;Chang-Jun Ahn;Ken-ya Hashimoto;Mikio Kamada;Y. Wada
• 通讯作者: Y. Wada

スパッタ法により作製したGaAs上FeCo単結晶薄膜のアニーリング効果

FeCo单晶薄膜对溅射法制备的GaAs的退火效应

• 发表时间: 2013
• 作者: 草岡昭成;高橋豊;稲葉信幸;桐野文良;大竹充;二本正昭
• 通讯作者: 二本正昭

強磁性共鳴法による各種強磁性単結晶薄膜の磁気緩和定数評価

利用铁磁共振法评估各种铁磁单晶薄膜的磁弛豫常数

• 发表时间: 2012
• 作者: 稲葉信幸;高橋豊;桐野文良;大竹充;二本正昭
• 通讯作者: 二本正昭

Q-Band Ferromagnetic Resonance Study of Fe Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

• DOI: 10.1109/tmag.2011.2158847
• 发表时间: 2011-06
• 期刊: IEEE Transactions on Magnetics
• 影响因子: 2.1
• 作者: Y. Takahashi;H. Ikeya;N. Inaba;F. Kirino;M. Ohtake;M. Futamoto

Angular dependence of ferromagnetic resonance line width for Fe(100-x)Co(x)(001) single crystal thin films with bcc and fcc crystal structure

具有bcc和fcc晶体结构的Fe(100-x)Co(x)(001)单晶薄膜铁磁共振线宽的角度依赖性

• 发表时间: 2014
• 作者: M. Tsuruike;H. Fujita;Y. Takahashi;N. Inaba;M. Ohtake;M. Futamoto;F. Kirino
• 通讯作者: F. Kirino