Vertical, strained 1 D silicon Nanostructures and Devices

垂直应变一维硅纳米结构和器件

• 批准号: 5439632
• 负责人: Professorin Dr.-Ing. Silke Christiansen
• 金额: --
• 依托单位: Abteilung Korrelative Mikroskopie und Materialdaten
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2005
• 资助国家: 德国
• 起止时间: 2004-12-31 至 2008-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5439632?language=en
• 关键词: Vertical; strained; silicon; Nanostructures; Devices

The chemical synthesis of 1D silicon nanostructures has provided a new route to manufacture vertical semiconducting nanostructures with precision on the atomic scale. A major problem inhibiting the utilization of these structures and limiting the investigation of their fundamental electronic and mechanical properties is finding a way to incorporate them into circuits. Elucidating 'Vertical strained 1D silicon Nanostructures and Devices' is a complex task, which requires an interdisciplinary consortium capable of addressing all relevant issues from metal nanoparticle template formation to controlled growth of 1D silicon nanostructures and their analysis in terms of mechanical and electrical properties as well as device integration issues. In this proposal we suggest therefore a transnational cooperation between the Max-Planck-Institute of Microstructure Physics (MPI), Halle (D), the Institute of Solid State Physics (IFK), Jena (D), the Institute for Solid State Electronics (FKE), Technical University of Vienna (A), the Materials Measurement Research Group at the 'Eidgenössische Materialprüfanstalt' (EMPA), Thun (CH) and the Nanostructure Research Group at the Ecole Polytechnique Federale de Lausanne (EPFL) in Lausanne (CH). While the EPFL and the FKE are responsible for providing ordered nanotemplates, the task of IFK, MPI and EPFL is to cover different aspects of controlled growth of 1D nanostructures on these templates. The EMPA is responsible for the electrical and mechanical characterization of individual 1D nanostructures. MPI and EMPA will carry out structural investigations down to the atomic scale. Using advanced wafer bonding at MPI the integration of nanowires in nano-electronic devices will be attempted while the actual devices will be manufactured at FKE

一维硅纳米结构的化学合成为在原子尺度上精确制造垂直半导体纳米结构提供了一条新的途径。抑制这些结构的利用和限制对其基本电子和机械性能的研究的一个主要问题是找到一种将它们整合到电路中的方法。阐明“垂直应变一维硅纳米结构和器件”是一项复杂的任务，它需要一个跨学科的联盟，能够解决所有相关问题，从金属纳米颗粒模板形成到一维硅纳米结构的控制生长，以及它们在机械和电气性能方面的分析，以及器件集成问题。因此，在本提案中，我们建议马克斯-普朗克微观结构物理研究所（MPI），哈雷(D)，固态物理研究所（IFK），耶拿(D)，固态电子研究所（FKE），维也纳技术大学(a)，材料测量研究组在‘Eidgenössische materialprfanstalt ’ （EMPA）， Thun （CH）和洛桑联邦理工学院（EPFL）的纳米结构研究组之间的跨国合作。EPFL和FKE负责提供有序的纳米模板，而IFK、MPI和EPFL的任务是涵盖在这些模板上控制一维纳米结构生长的不同方面。EMPA负责单个一维纳米结构的电学和力学表征。MPI和EMPA将进行原子尺度的结构研究。在MPI使用先进的晶圆键合，将尝试将纳米线集成到纳米电子器件中，而实际的器件将在FKE制造