Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes

电力电子器件的新型热管理：高功率高频平面耿氏二极管

• 批准号: EP/H011366/1
• 负责人: Martin Kuball
• 金额: $ 35.72万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH011366%2F1
• 关键词: Novel; Thermal; Management; Power; Electronic

This proposal targets the development of a compact high power planar Gunn diode suitable for Tera-Hertz (THz) imaging. THz imaging is seen as new opportunity for enhanced security screening at airports, train stations, and other security sensitive places to counter terrorist threats. To achieve high-power THz Gunn diodes, novel heat-sink technologies will need to be developed, which is the key aim of this proposal. This proposal focuses on a novel Gunn diode design, planar Gunn diodes, which enables output frequencies much higher than possible with the traditional commercially available vertical Gunn diode design. We will develop innovative integrated cooling approaches using a combination of thermoelectric (TE) and gas micro-refrigeration for planar Gunn diodes to achieve the goal of a compact and high power Gunn diode suitable as source for THz imaging. With the UK being technology industry leader on Gunn diodes (e.g. e2v technologies Ltd.), the development of compact and high-power THz Gunn diodes is of strategic importance for UK science, engineering and technology, to gain an international lead in the THz field. Developments on integrated active device cooling achieved in this work, however, will be transferable to other device systems. This is important as active cooling to remove heat from electronic and opto-electronic devices is becoming increasingly important as devices shrink in size, packing densities increase, and as higher output powers are demanded in many applications. The proposal brings together internationally leading UK groups on Gunn diodes and their design, cooling technologies, thermal characterization and device thermal management.

该建议的目标是开发一种适用于太赫兹（THz）成像的紧凑型高功率平面古恩二极管。太赫兹成像被视为在机场、火车站和其他安全敏感场所加强安全检查以应对恐怖主义威胁的新机会。为了实现高功率太赫兹古恩二极管，新的散热技术将需要开发，这是本提案的关键目标。本提案集中于一种新颖的古恩二极管设计，即平面古恩二极管，其使得输出频率比传统的市售垂直古恩二极管设计的可能频率高得多。我们将开发创新的集成冷却方法，使用热电（TE）和气体微制冷的平面古恩二极管的组合，以实现紧凑和高功率的古恩二极管的目标，适合作为太赫兹成像源。由于英国是古恩二极管技术行业的领导者（例如e2v技术有限公司），紧凑和高功率THz古恩二极管的发展对于英国科学、工程和技术具有战略重要性，以在THz领域获得国际领先地位。然而，在这项工作中实现的集成有源器件冷却的发展，将转移到其他设备系统。这一点很重要，因为随着器件尺寸缩小、封装密度增加以及许多应用中需要更高的输出功率，从电子和光电器件中去除热量的主动冷却变得越来越重要。该提案汇集了古恩二极管及其设计、冷却技术、热特性和器件热管理方面的国际领先英国团体。

项目成果

Improving the quality factor of the coplanar waveguide resonator

提高共面波导谐振器的品质因数

• DOI: 10.1002/mop.29082
• 发表时间: 2015
• 期刊: Microwave and Optical Technology Letters
• 影响因子: 1.5
• 作者: Maricar M

Reduction of Impact Ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design

• DOI: 10.1109/ted.2011.2177094
• 发表时间: 2012-03
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: M. Montes;G. Dunn;A. Stephen;A. Khalid;C. Li-;D. Cumming;C. Oxley;R. Hopper;Martin Kuball

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

AlGaN/GaN 高电子迁移率晶体管断态退化的时间演化

• DOI: 10.1063/1.4881637
• 发表时间: 2014
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Bajo M

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

低位错密度块状 GaN 衬底上的 AlGaN/GaN 高电子迁移率晶体管的可靠性：表面台阶边缘的影响

• DOI: 10.1063/1.4829062
• 发表时间: 2013
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Killat N

On wafer thermal characterization of miniature gallium arsenide microcoolers with thermal loading from DC probes

• DOI: 10.1002/mop.28681
• 发表时间: 2014-11
• 期刊: Microwave and Optical Technology Letters
• 影响因子: 1.5
• 作者: J. Glover;A. Khalid;D. Cumming;M. Bajo;M. Kuball;A. Stephen;G. Dunn;C. Oxley