Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
GaN 电子器件中的亚微米 3D 电场测绘
基本信息
- 批准号:EP/R022739/1
- 负责人:
- 金额:$ 92.77万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2018
- 资助国家:英国
- 起止时间:2018 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
AlGaN/GaN high electron mobility transistors (HEMTs) are a transformative technology for high-power density radio frequency applications, including radar, satellite and mobile communications. In addition, efficient power conversion systems based on GaN devices are a key enabling technology for the low carbon economy, including renewable energy generation and transport electrification. However, their full potential has not yet been realised because performance is de-rated to ensure stable long-term device operation. Experimental characterisation of the electric field distribution in these devices has been lacking, despite being identified as a primary driver of degradation phenomena including breakdown, charge trapping and self-heating. These processes occur in and around the device channel and particularly the sub-micron region under the gate and field plate where peak electric fields are located. The aim of this proposal is a step-change in electric field imaging of semiconductor devices, by developing an optical three dimensional (3-D) device analysis technique with nanometre-scale spatial resolution. The primary focus will be on electric field induced second harmonic generation (EFISHG) combined with solid immersion lenses (SILs). This will enable us to investigate key performance and reliability challenges including (i) the effect of buffer doping on the dynamic distribution of charge in the device layers which causes an undesirable memory effect, (ii) optimization of field plate geometry to manage peak electric fields, (iii) comparing electric field distributions during RF and DC operation to improve reliability forecasts. These are on the critical pathway to achieving a high performance reliable GaN HEMT device technology which exploits the full benefits of the material properties of GaN.
AlGaN/GaN高电子迁移率晶体管(HEMT)是用于高功率密度射频应用(包括雷达、卫星和移动的通信)的变革性技术。此外,基于GaN器件的高效功率转换系统是低碳经济的关键技术,包括可再生能源发电和运输电气化。然而,它们的全部潜力尚未实现,因为性能被降级以确保稳定的长期设备操作。尽管这些器件中的电场分布被确定为包括击穿、电荷捕获和自加热在内的退化现象的主要驱动因素,但仍然缺乏对这些器件中电场分布的实验表征。这些过程发生在器件沟道中及其周围,特别是峰值电场所在的栅极和场板下方的亚微米区域。本提案的目的是通过开发具有纳米级空间分辨率的光学三维(3-D)器件分析技术,实现半导体器件电场成像的阶跃变化。主要的焦点将是电场感应二次谐波产生(EFISHG)与固体浸没透镜(锡尔斯)相结合。这将使我们能够研究关键的性能和可靠性挑战,包括(i)缓冲掺杂对器件层中电荷动态分布的影响,这会导致不期望的记忆效应,(ii)优化场板几何形状以管理峰值电场,(iii)比较RF和DC操作期间的电场分布以提高可靠性预测。这些都是实现高性能可靠的GaN HEMT器件技术的关键途径,该技术充分利用了GaN材料特性的所有优势。
项目成果
期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Submicrometer Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices
- DOI:10.1021/acsaelm.9b00575
- 发表时间:2020-01-01
- 期刊:
- 影响因子:4.7
- 作者:Oner, Bahar;Pomeroy, James W.;Kuball, Martin
- 通讯作者:Kuball, Martin
Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation
垂直 GaN 二极管边缘终端的设计和制造:通过二次谐波产生探测电场分布
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Cao Y.
- 通讯作者:Cao Y.
Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
- DOI:10.1038/s41928-021-00599-5
- 发表时间:2021-06-21
- 期刊:
- 影响因子:34.3
- 作者:Cao, Yuke;Pomeroy, James W.;Kuball, Martin
- 通讯作者:Kuball, Martin
Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation
- DOI:10.1063/5.0096755
- 发表时间:2022-06-13
- 期刊:
- 影响因子:4
- 作者:Cao, Yuke;Pomeroy, James W.;Kuball, Martin
- 通讯作者:Kuball, Martin
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Martin Kuball其他文献
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
在块状 GaN 衬底上生长的 AlGaN/GaN HEMT 的非阿累尼乌斯退化
- DOI:
- 发表时间:
2012 - 期刊:
- 影响因子:4.9
- 作者:
M. Ťapajna;N. Killat;J. Moereke;T. Paskova;K. Evans;J. Leach;X. Li;U. Ozgur;H. Morkoç;K. Chabak;A. Crespo;J. Gillespie;R. Fitch;M. Kossler;D. Walker;M. Trejo;G. Via;J. Blevins;Martin Kuball - 通讯作者:
Martin Kuball
Siと接合したダイヤモンド基板上のFETの作製
在与 Si 结合的金刚石基底上制造 FET
- DOI:
- 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
神田 進司;山條 翔二;Martin Kuball;重川 直輝;梁 剣波 - 通讯作者:
梁 剣波
Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition
使用 SiNx 沉积控制 AlGaN/GaN HEMT 中缓冲器引起的电流崩塌
- DOI:
10.1109/ted.2017.2738669 - 发表时间:
2017 - 期刊:
- 影响因子:3.1
- 作者:
W. M. Waller;M. Gajda;S. Pandey;J. Donkers;D. Calton;J. Croon;J. Sonsky;M. Uren;Martin Kuball - 通讯作者:
Martin Kuball
Novel thermal management of GaN electronics - Diamond substrates
GaN 电子器件的新颖热管理 - 金刚石衬底
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Martin Kuball;J. Pomeroy;J. Calvo;Huarui Sun;Roland B. Simon;D. Francis;F. Faili;D. Twitchen;S. Rossi;M. Alomari;E. Kohn;L. Tóth;B. Pécz - 通讯作者:
B. Pécz
Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films
高质量B 12 As 2 单晶外延薄膜生长过程中简并外延的消除
- DOI:
10.1557/opl.2011.316 - 发表时间:
2011 - 期刊:
- 影响因子:0
- 作者:
Yu Zhang;Hui Chen;M. Dudley;Yi Zhang;J. Edgar;Y. Gong;S. Bakalova;Martin Kuball;Lihua Zhang;D. Su;Yimei Zhu - 通讯作者:
Yimei Zhu
Martin Kuball的其他文献
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{{ truncateString('Martin Kuball', 18)}}的其他基金
Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
利用超宽带隙半导体器件技术 (REWIRE) 改造净零
- 批准号:
EP/Z531091/1 - 财政年份:2024
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
超宽带隙 AlGaN 电力电子 - 改造固态断路器 (ULTRAlGaN)
- 批准号:
EP/X035360/1 - 财政年份:2024
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
ECCS-EPSRC - 用于毫米波下一代无线通信的先进 III-N 器件和电路架构
- 批准号:
EP/X012123/1 - 财政年份:2023
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
Boron-based semiconductors - the next generation of high thermal conductivity materials
硼基半导体——下一代高导热材料
- 批准号:
EP/W034751/1 - 财政年份:2023
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
范德华 Ga2O3 功能材料外延:革命性的电力电子学
- 批准号:
EP/X015882/1 - 财政年份:2023
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
FINER: Future thermal Imaging with Nanometre Enhanced Resolution
FINER:具有纳米增强分辨率的未来热成像
- 批准号:
EP/V057626/1 - 财政年份:2022
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
Materials and Devices for Next Generation Internet (MANGI)
下一代互联网材料和设备(MANGI)
- 批准号:
EP/R029393/1 - 财政年份:2018
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
集成 GaN-金刚石微波电子器件:从材料、晶体管到 MMIC
- 批准号:
EP/P00945X/1 - 财政年份:2017
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
Quantitative non-destructive nanoscale characterisation of advanced materials
先进材料的定量无损纳米级表征
- 批准号:
EP/P013562/1 - 财政年份:2017
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
High Performance Buffers for RF GaN Electronics
适用于 RF GaN 电子器件的高性能缓冲器
- 批准号:
EP/N031563/1 - 财政年份:2016
- 资助金额:
$ 92.77万 - 项目类别:
Research Grant
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