Materials and Devices for Next Generation Internet (MANGI)
Materials and Devices for Next Generation Internet (MANGI)
批准号:
EP/R029393/1
负责人:
Martin Kuball
金额:
$185.85万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2018
资助国家:
英国
项目状态:
已结题
起止时间:
2018 至 --
中文摘要
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英文摘要
The rapid growth of the rich variety of connected devices, from sensors, to cars, to wearables, to smart buildings, is placing a varied and highly complex set of bandwidth, latency, priority, reliability, power, roaming, and cost requirements on how these devices connect and on how information is moved around. Efficient communications remains a very difficult challenge for our digital world, and understanding how to design devices and systems that make good trade-offs between these different requirements requires skills from several disciplines.MANGI will underpin the critical mass and expertise in Bristol's Smart Internet and Devices Laboratory (SIDL) enabling the creation of a Next Generation Internet, with career development of our senior and most talented postdoctoral researchers forming a core part of our activity. Bristol's SIDL brings together the Smart Internet Lab (SIL) in Electrical & Electronic Engineering and the Centre for Device Thermography and Reliability (CDTR) in Physics at the University of Bristol, and has a world-leading track record, spanning the complete digital communication engine from novel wide bandgap semiconductor RF/optical devices to state-of-the-art high performance network architecture design and operation, on the pathway to enabling the Next Generation Internet.New devices and materials are critically needed as key enablers for the necessary transition from the current to the Next Generation Internet which needs to be energy efficient and provide highly flexible connectivity across optical-wireless domains. Using pump-priming projects to retain and develop our outstanding postdoctoral researchers, revolutionary interdisciplinary approaches will be developed in order to adopt high risk strategies focused on grand challenges aimed at enabling the Next Generation Internet. This approach taken is not possible with standard mode funding. Advances in component technologies, to provide higher speed/linearity, higher power devices, more compact device and packaging design, alongside use of new materials will have transformative impact upon network operation. The flexibility of the platform will be a corner stone of MANGI, allowing our most senior postdoctoral researchers to develop and drive their own research ideas, with interdisciplinary mentoring by senior members of SIDL and industry. This will help remove blockages in current technology and overcome the current internet infrastructure challenges. Standard research paths are not able to support independent development and innovation at physical and network layer functionalities, protocols, and services, while at the same time supporting the increasing bandwidth demands of changing and diverse applications, largely because of current limitations in semiconductor device and packaging technology and a lack of co-design of the multitude of constituent parts.
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DOI:
10.1088/1361-6641/ab9d35
发表时间:
2020-08
期刊:
Semiconductor Science and Technology
影响因子:
1.9
作者:
[W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball]
通讯作者:
W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball
Characterization of trap states in buried nitrogen-implanted ß -Ga2O3
掩埋氮注入 -Ga2O3 中陷阱态的表征
DOI:
10.1063/5.0031480
发表时间:
2020
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Mishra A]
通讯作者:
Mishra A
DOI:
10.1016/j.apsusc.2020.146297
发表时间:
2020-08
期刊:
Applied Surface Science
影响因子:
6.7
作者:
[Matthew D. Smith;Xu Li;M. Uren;I. Thayne;M. Kuball]
通讯作者:
Matthew D. Smith;Xu Li;M. Uren;I. Thayne;M. Kuball
DOI:
10.1016/j.nantod.2021.101206
发表时间:
2021-08
期刊:
Nano Today
影响因子:
17.4
作者:
[F. Gucmann;J. Pomeroy;Martin Kuball]
通讯作者:
F. Gucmann;J. Pomeroy;Martin Kuball
High-Speed Electro-Thermal Measurements in RF Power Amplifiers Using Thermo-Reflectance
使用热反射法对射频功率放大器进行高速电热测量
DOI:
10.1109/inmmic54248.2022.9762126
发表时间:
2022
期刊:
影响因子:
--
作者:
[Jindal G]
通讯作者:
Jindal G
共 6 条
Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
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批准号:EP/Z531091/1
-
项目类别:Research Grant
-
资助金额:$1497.04万
-
财政年份:2024
-
负责人:Martin Kuball
-
依托单位:
Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
-
批准号:EP/X035360/1
-
项目类别:Research Grant
-
资助金额:$678.7万
-
财政年份:2024
-
负责人:Martin Kuball
-
依托单位:
ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
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批准号:EP/X012123/1
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项目类别:Research Grant
-
资助金额:$48.74万
-
财政年份:2023
-
负责人:Martin Kuball
-
依托单位:
Boron-based semiconductors - the next generation of high thermal conductivity materials
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批准号:EP/W034751/1
-
项目类别:Research Grant
-
资助金额:$31.28万
-
财政年份:2023
-
负责人:Martin Kuball
-
依托单位:
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
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批准号:EP/X015882/1
-
项目类别:Research Grant
-
资助金额:$25.67万
-
财政年份:2023
-
负责人:Martin Kuball
-
依托单位:
FINER: Future thermal Imaging with Nanometre Enhanced Resolution
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批准号:EP/V057626/1
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项目类别:Research Grant
-
资助金额:$88.06万
-
财政年份:2022
-
负责人:Martin Kuball
-
依托单位:
Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
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批准号:EP/R022739/1
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项目类别:Research Grant
-
资助金额:$92.77万
-
财政年份:2018
-
负责人:Martin Kuball
-
依托单位:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
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批准号:EP/P00945X/1
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项目类别:Research Grant
-
资助金额:$551.14万
-
财政年份:2017
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负责人:Martin Kuball
-
依托单位:
Quantitative non-destructive nanoscale characterisation of advanced materials
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批准号:EP/P013562/1
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项目类别:Research Grant
-
资助金额:$18.03万
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财政年份:2017
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负责人:Martin Kuball
-
依托单位:
High Performance Buffers for RF GaN Electronics
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批准号:EP/N031563/1
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项目类别:Research Grant
-
资助金额:$96.85万
-
财政年份:2016
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负责人:Martin Kuball
-
依托单位:
GaN Electronics: RF Reliability and Degradation Mechanisms
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批准号:EP/K026232/1
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项目类别:Research Grant
-
资助金额:$68.85万
-
财政年份:2014
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负责人:Martin Kuball
-
依托单位:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
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批准号:EP/K024345/1
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项目类别:Research Grant
-
资助金额:$50.1万
-
财政年份:2013
-
负责人:Martin Kuball
-
依托单位:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
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批准号:EP/I033165/1
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项目类别:Research Grant
-
资助金额:$52.84万
-
财政年份:2011
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负责人:Martin Kuball
-
依托单位:
Development of an integrated optical E-Probe for GaN power transistor reliability analysis
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批准号:EP/H037853/1
-
项目类别:Research Grant
-
资助金额:$38.86万
-
财政年份:2010
-
负责人:Martin Kuball
-
依托单位:
Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes
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批准号:EP/H011366/1
-
项目类别:Research Grant
-
资助金额:$35.72万
-
财政年份:2010
-
负责人:Martin Kuball
-
依托单位:
Fabrication of first 337 nm laser diodes for biological applications
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批准号:EP/F033826/1
-
项目类别:Research Grant
-
资助金额:$2.11万
-
财政年份:2008
-
负责人:Martin Kuball
-
依托单位:
NSF: An investigation into the properties of B12As2, B4C and their heterostructures
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批准号:EP/D075033/1
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项目类别:Research Grant
-
资助金额:$53.34万
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财政年份:2007
-
负责人:Martin Kuball
-
依托单位:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
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批准号:EP/D045304/1
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项目类别:Research Grant
-
资助金额:$53.25万
-
财政年份:2006
-
负责人:Martin Kuball
-
依托单位:
国内基金
海外基金
兼捕减少装置(Bycatch Reduction Devices, BRD)对拖网网囊系统水动力及渔获性能的调控机制
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批准号:32373187
-
项目类别:面上项目
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资助金额:50万元
-
批准年份:2023
-
负责人:唐浩
-
依托单位: