Materials and Devices for Next Generation Internet (MANGI)
下一代互联网材料和设备(MANGI)
基本信息
- 批准号:EP/R029393/1
- 负责人:
- 金额:$ 185.85万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2018
- 资助国家:英国
- 起止时间:2018 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The rapid growth of the rich variety of connected devices, from sensors, to cars, to wearables, to smart buildings, is placing a varied and highly complex set of bandwidth, latency, priority, reliability, power, roaming, and cost requirements on how these devices connect and on how information is moved around. Efficient communications remains a very difficult challenge for our digital world, and understanding how to design devices and systems that make good trade-offs between these different requirements requires skills from several disciplines.MANGI will underpin the critical mass and expertise in Bristol's Smart Internet and Devices Laboratory (SIDL) enabling the creation of a Next Generation Internet, with career development of our senior and most talented postdoctoral researchers forming a core part of our activity. Bristol's SIDL brings together the Smart Internet Lab (SIL) in Electrical & Electronic Engineering and the Centre for Device Thermography and Reliability (CDTR) in Physics at the University of Bristol, and has a world-leading track record, spanning the complete digital communication engine from novel wide bandgap semiconductor RF/optical devices to state-of-the-art high performance network architecture design and operation, on the pathway to enabling the Next Generation Internet.New devices and materials are critically needed as key enablers for the necessary transition from the current to the Next Generation Internet which needs to be energy efficient and provide highly flexible connectivity across optical-wireless domains. Using pump-priming projects to retain and develop our outstanding postdoctoral researchers, revolutionary interdisciplinary approaches will be developed in order to adopt high risk strategies focused on grand challenges aimed at enabling the Next Generation Internet. This approach taken is not possible with standard mode funding. Advances in component technologies, to provide higher speed/linearity, higher power devices, more compact device and packaging design, alongside use of new materials will have transformative impact upon network operation. The flexibility of the platform will be a corner stone of MANGI, allowing our most senior postdoctoral researchers to develop and drive their own research ideas, with interdisciplinary mentoring by senior members of SIDL and industry. This will help remove blockages in current technology and overcome the current internet infrastructure challenges. Standard research paths are not able to support independent development and innovation at physical and network layer functionalities, protocols, and services, while at the same time supporting the increasing bandwidth demands of changing and diverse applications, largely because of current limitations in semiconductor device and packaging technology and a lack of co-design of the multitude of constituent parts.
从传感器、汽车、可穿戴设备到智能建筑,各种连接设备的快速增长,对这些设备的连接方式和信息的传输方式提出了各种高度复杂的带宽、延迟、优先级、可靠性、功耗、漫游和成本要求。对于我们的数字世界来说,高效的通信仍然是一个非常困难的挑战,理解如何设计设备和系统,在这些不同的需求之间做出良好的权衡,需要来自多个学科的技能。MANGI将巩固布里斯托尔智能互联网和设备实验室(SIDL)的临界质量和专业知识,使下一代互联网的创建成为可能,我们的高级和最有才华的博士后研究人员的职业发展是我们活动的核心部分。布里斯托尔的SIDL汇集了电气和电子工程智能互联网实验室(SIL)和布里斯托尔大学物理设备热成像和可靠性中心(CDTR),并拥有世界领先的业绩记录,涵盖了从新型宽带隙半导体射频/光学设备到最先进的高性能网络架构设计和运行的完整数字通信引擎,从而实现下一代互联网。从当前到下一代互联网的必要过渡需要新的设备和材料作为关键推动者,这需要节能,并在光无线领域提供高度灵活的连接。通过引进项目来留住和培养我们优秀的博士后研究人员,我们将开发革命性的跨学科方法,以采用高风险策略,专注于实现下一代互联网的重大挑战。采用这种方法在标准模式下是不可能的。组件技术的进步,提供更高的速度/线性度,更高的功率器件,更紧凑的器件和封装设计,以及新材料的使用将对网络运行产生变革性影响。该平台的灵活性将成为MANGI的基石,允许我们最资深的博士后研究人员在SIDL和行业资深成员的跨学科指导下发展和推动他们自己的研究想法。这将有助于消除当前技术的障碍,克服当前互联网基础设施的挑战。标准研究路径无法支持物理层和网络层功能、协议和服务的独立开发和创新,同时支持不断变化和多样化应用的不断增长的带宽需求,这主要是因为目前半导体器件和封装技术的限制以及缺乏众多组成部分的协同设计。
项目成果
期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond
- DOI:10.1088/1361-6641/ab9d35
- 发表时间:2020-08
- 期刊:
- 影响因子:1.9
- 作者:W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball
- 通讯作者:W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball
Characterization of trap states in buried nitrogen-implanted ß -Ga2O3
掩埋氮注入 -Ga2O3 中陷阱态的表征
- DOI:10.1063/5.0031480
- 发表时间:2020
- 期刊:
- 影响因子:4
- 作者:Mishra A
- 通讯作者:Mishra A
Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN
- DOI:10.1016/j.apsusc.2020.146297
- 发表时间:2020-08
- 期刊:
- 影响因子:6.7
- 作者:Matthew D. Smith;Xu Li;M. Uren;I. Thayne;M. Kuball
- 通讯作者:Matthew D. Smith;Xu Li;M. Uren;I. Thayne;M. Kuball
Scanning thermal microscopy for accurate nanoscale device thermography
- DOI:10.1016/j.nantod.2021.101206
- 发表时间:2021-08
- 期刊:
- 影响因子:17.4
- 作者:F. Gucmann;J. Pomeroy;Martin Kuball
- 通讯作者:F. Gucmann;J. Pomeroy;Martin Kuball
High-Speed Electro-Thermal Measurements in RF Power Amplifiers Using Thermo-Reflectance
使用热反射法对射频功率放大器进行高速电热测量
- DOI:10.1109/inmmic54248.2022.9762126
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Jindal G
- 通讯作者:Jindal G
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Martin Kuball其他文献
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
在块状 GaN 衬底上生长的 AlGaN/GaN HEMT 的非阿累尼乌斯退化
- DOI:
- 发表时间:
2012 - 期刊:
- 影响因子:4.9
- 作者:
M. Ťapajna;N. Killat;J. Moereke;T. Paskova;K. Evans;J. Leach;X. Li;U. Ozgur;H. Morkoç;K. Chabak;A. Crespo;J. Gillespie;R. Fitch;M. Kossler;D. Walker;M. Trejo;G. Via;J. Blevins;Martin Kuball - 通讯作者:
Martin Kuball
Siと接合したダイヤモンド基板上のFETの作製
在与 Si 结合的金刚石基底上制造 FET
- DOI:
- 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
神田 進司;山條 翔二;Martin Kuball;重川 直輝;梁 剣波 - 通讯作者:
梁 剣波
Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition
使用 SiNx 沉积控制 AlGaN/GaN HEMT 中缓冲器引起的电流崩塌
- DOI:
10.1109/ted.2017.2738669 - 发表时间:
2017 - 期刊:
- 影响因子:3.1
- 作者:
W. M. Waller;M. Gajda;S. Pandey;J. Donkers;D. Calton;J. Croon;J. Sonsky;M. Uren;Martin Kuball - 通讯作者:
Martin Kuball
Novel thermal management of GaN electronics - Diamond substrates
GaN 电子器件的新颖热管理 - 金刚石衬底
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Martin Kuball;J. Pomeroy;J. Calvo;Huarui Sun;Roland B. Simon;D. Francis;F. Faili;D. Twitchen;S. Rossi;M. Alomari;E. Kohn;L. Tóth;B. Pécz - 通讯作者:
B. Pécz
Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films
高质量B 12 As 2 单晶外延薄膜生长过程中简并外延的消除
- DOI:
10.1557/opl.2011.316 - 发表时间:
2011 - 期刊:
- 影响因子:0
- 作者:
Yu Zhang;Hui Chen;M. Dudley;Yi Zhang;J. Edgar;Y. Gong;S. Bakalova;Martin Kuball;Lihua Zhang;D. Su;Yimei Zhu - 通讯作者:
Yimei Zhu
Martin Kuball的其他文献
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{{ truncateString('Martin Kuball', 18)}}的其他基金
Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
利用超宽带隙半导体器件技术 (REWIRE) 改造净零
- 批准号:
EP/Z531091/1 - 财政年份:2024
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
超宽带隙 AlGaN 电力电子 - 改造固态断路器 (ULTRAlGaN)
- 批准号:
EP/X035360/1 - 财政年份:2024
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
ECCS-EPSRC - 用于毫米波下一代无线通信的先进 III-N 器件和电路架构
- 批准号:
EP/X012123/1 - 财政年份:2023
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
Boron-based semiconductors - the next generation of high thermal conductivity materials
硼基半导体——下一代高导热材料
- 批准号:
EP/W034751/1 - 财政年份:2023
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
范德华 Ga2O3 功能材料外延:革命性的电力电子学
- 批准号:
EP/X015882/1 - 财政年份:2023
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
FINER: Future thermal Imaging with Nanometre Enhanced Resolution
FINER:具有纳米增强分辨率的未来热成像
- 批准号:
EP/V057626/1 - 财政年份:2022
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
GaN 电子器件中的亚微米 3D 电场测绘
- 批准号:
EP/R022739/1 - 财政年份:2018
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
集成 GaN-金刚石微波电子器件:从材料、晶体管到 MMIC
- 批准号:
EP/P00945X/1 - 财政年份:2017
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
Quantitative non-destructive nanoscale characterisation of advanced materials
先进材料的定量无损纳米级表征
- 批准号:
EP/P013562/1 - 财政年份:2017
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
High Performance Buffers for RF GaN Electronics
适用于 RF GaN 电子器件的高性能缓冲器
- 批准号:
EP/N031563/1 - 财政年份:2016
- 资助金额:
$ 185.85万 - 项目类别:
Research Grant
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