Materials and Devices for Next Generation Internet (MANGI)

下一代互联网材料和设备（MANGI）

• 批准号: EP/R029393/1
• 负责人: Martin Kuball
• 金额: $ 185.85万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR029393%2F1
• 关键词: Materials; Devices; Next; Generation; Internet

The rapid growth of the rich variety of connected devices, from sensors, to cars, to wearables, to smart buildings, is placing a varied and highly complex set of bandwidth, latency, priority, reliability, power, roaming, and cost requirements on how these devices connect and on how information is moved around. Efficient communications remains a very difficult challenge for our digital world, and understanding how to design devices and systems that make good trade-offs between these different requirements requires skills from several disciplines.MANGI will underpin the critical mass and expertise in Bristol's Smart Internet and Devices Laboratory (SIDL) enabling the creation of a Next Generation Internet, with career development of our senior and most talented postdoctoral researchers forming a core part of our activity. Bristol's SIDL brings together the Smart Internet Lab (SIL) in Electrical & Electronic Engineering and the Centre for Device Thermography and Reliability (CDTR) in Physics at the University of Bristol, and has a world-leading track record, spanning the complete digital communication engine from novel wide bandgap semiconductor RF/optical devices to state-of-the-art high performance network architecture design and operation, on the pathway to enabling the Next Generation Internet.New devices and materials are critically needed as key enablers for the necessary transition from the current to the Next Generation Internet which needs to be energy efficient and provide highly flexible connectivity across optical-wireless domains. Using pump-priming projects to retain and develop our outstanding postdoctoral researchers, revolutionary interdisciplinary approaches will be developed in order to adopt high risk strategies focused on grand challenges aimed at enabling the Next Generation Internet. This approach taken is not possible with standard mode funding. Advances in component technologies, to provide higher speed/linearity, higher power devices, more compact device and packaging design, alongside use of new materials will have transformative impact upon network operation. The flexibility of the platform will be a corner stone of MANGI, allowing our most senior postdoctoral researchers to develop and drive their own research ideas, with interdisciplinary mentoring by senior members of SIDL and industry. This will help remove blockages in current technology and overcome the current internet infrastructure challenges. Standard research paths are not able to support independent development and innovation at physical and network layer functionalities, protocols, and services, while at the same time supporting the increasing bandwidth demands of changing and diverse applications, largely because of current limitations in semiconductor device and packaging technology and a lack of co-design of the multitude of constituent parts.

从传感器、汽车、可穿戴设备到智能建筑，各种连接设备的快速增长，对这些设备的连接方式和信息的传输方式提出了各种高度复杂的带宽、延迟、优先级、可靠性、功耗、漫游和成本要求。对于我们的数字世界来说，高效的通信仍然是一个非常困难的挑战，理解如何设计设备和系统，在这些不同的需求之间做出良好的权衡，需要来自多个学科的技能。MANGI将巩固布里斯托尔智能互联网和设备实验室（SIDL）的临界质量和专业知识，使下一代互联网的创建成为可能，我们的高级和最有才华的博士后研究人员的职业发展是我们活动的核心部分。布里斯托尔的SIDL汇集了电气和电子工程智能互联网实验室（SIL）和布里斯托尔大学物理设备热成像和可靠性中心（CDTR），并拥有世界领先的业绩记录，涵盖了从新型宽带隙半导体射频/光学设备到最先进的高性能网络架构设计和运行的完整数字通信引擎，从而实现下一代互联网。从当前到下一代互联网的必要过渡需要新的设备和材料作为关键推动者，这需要节能，并在光无线领域提供高度灵活的连接。通过引进项目来留住和培养我们优秀的博士后研究人员，我们将开发革命性的跨学科方法，以采用高风险策略，专注于实现下一代互联网的重大挑战。采用这种方法在标准模式下是不可能的。组件技术的进步，提供更高的速度/线性度，更高的功率器件，更紧凑的器件和封装设计，以及新材料的使用将对网络运行产生变革性影响。该平台的灵活性将成为MANGI的基石，允许我们最资深的博士后研究人员在SIDL和行业资深成员的跨学科指导下发展和推动他们自己的研究想法。这将有助于消除当前技术的障碍，克服当前互联网基础设施的挑战。标准研究路径无法支持物理层和网络层功能、协议和服务的独立开发和创新，同时支持不断变化和多样化应用的不断增长的带宽需求，这主要是因为目前半导体器件和封装技术的限制以及缺乏众多组成部分的协同设计。

项目成果

Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond

• DOI: 10.1088/1361-6641/ab9d35
• 发表时间: 2020-08
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: W. M. Waller;J. Pomeroy;D. Field;Edmund Smith;P. May;M. Kuball

Characterization of trap states in buried nitrogen-implanted ß -Ga2O3

掩埋氮注入 -Ga2O3 中陷阱态的表征

• DOI: 10.1063/5.0031480
• 发表时间: 2020
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Mishra A

Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN

• DOI: 10.1016/j.apsusc.2020.146297
• 发表时间: 2020-08
• 期刊: Applied Surface Science
• 影响因子: 6.7
• 作者: Matthew D. Smith;Xu Li;M. Uren;I. Thayne;M. Kuball

Scanning thermal microscopy for accurate nanoscale device thermography

• DOI: 10.1016/j.nantod.2021.101206
• 发表时间: 2021-08
• 期刊: Nano Today
• 影响因子: 17.4
• 作者: F. Gucmann;J. Pomeroy;Martin Kuball

High-Speed Electro-Thermal Measurements in RF Power Amplifiers Using Thermo-Reflectance

使用热反射法对射频功率放大器进行高速电热测量

• DOI: 10.1109/inmmic54248.2022.9762126
• 发表时间: 2022
• 作者: Jindal G