Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs

集成 GaN-金刚石微波电子器件：从材料、晶体管到 MMIC

• 批准号: EP/P00945X/1
• 负责人: Martin Kuball
• 金额: $ 551.14万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FP00945X%2F1
• 关键词: Integrated; GaN; Diamond; Microwave; Electronics

Global demand for high power microwave electronic devices that can deliver power densities well exceeding current technology is increasing. In particular Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are a key enabling technology for high-efficiency military and civilian microwave systems, and increasingly for power conditioning applications in the low carbon economy. This material and device system well exceeds the performance permitted by the existing Si LDMOS, GaAs PHEMT or HBT technologies. GaN-based HEMTs have reached RF power levels up to 40 W/mm, and at frequencies exceeding 300 GHz, i.e., a spectacular performance enabling disruptive changes for many system applications. However, transistor reliability is driven by electric field and channel temperature, so self-heating means in practice that reliable devices can only be operated up to RF power densities of 10 W/mm in contrast to the 40 W/mm hero data published in the literature. Considerable concern also exists in the UK and across Europe that access to state-of-the-art GaN microwave technology is limited by US ITAR (International Traffic in Arms Regulation) restrictions. The most advanced capabilities for all elements of GaN HEMT technology, using traditional SiC substrates, epitaxy and device processing currently reside in the US, with restricted access by UK industry.The vision of Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs (GaN-DaME) is to develop transformative GaN-on-Diamond HEMTs and MMICs, the technology step beyond GaN-on-SiC, which will revolutionize the thermal management which presently limits GaN electronics. Challenges occur in terms of how to integrate such dissimilar materials into a reliable device technology. The outcome will be devices with a >5x increase in RF power compared to GaN-on-SiC, or alternatively and equally valuably, a dramatic 'step-change' shrinkage in MMIC or PA size, and hence an increase in efficiency through the removal of lossy combining networks as well as a reduction in power amplifier (PA) cost. This represents a disruptive change in capability that will allow the realisation of new system architectures e.g. for RF seekers and medical applications, and enable the bandwidths needed to deliver 5G and beyond. Reduced requirements for cooling / increased reliability will result in major cost savings at the system level. To enable our vision to become reality, we will develop new diamond growth approaches that maximize diamond thermal conductivity close to the active GaN device area. In present GaN-on-Diamond devices a thin dielectric layer is required on the GaN surface to enable seeding and successful deposition of diamond onto the GaN. Unfortunately, most of the thermal barrier in these devices then exists at this GaN-dielectric-diamond interface, which has much poorer thermal conductivity than desired. Any reduction in this thermal resistance, either by removing the need for a dielectric seeding layer for diamond growth, or by optimizing the grain structure of the diamond near the seeding, would be of huge benefit. Novel diamond growth will be combined with innovative micro-fluidics using phase-change materials, a dramatically more powerful approach than conventional micro-fluidics, to further aid heat extraction. An undiscussed consequence of using diamond, its low dielectric constant, which poses challenges and opportunities for microwave design will be exploited. At the most basic level, the reliability of this technology is not known. For instance, at the materials level the diamond and GaN have very different coefficients of thermal expansion (CTE). Mechanically rigid interfaces will need to be developed including interdigitated GaN-diamond interfaces.

全球对高功率微波电子设备的需求，可以提供超过当前技术的功率密度的需求正在增加。特别是基于氮化岩（GAN）的高电子移动晶体管（HEMTS）是高效军事和平民微波系统的关键技术，并且越来越多地用于低碳经济中的电力调节应用。该材料和设备系统远远超过了现有的Si LDMO，GAAS PHEMT或HBT技术所允许的性能。基于GAN的HEMT已达到高达40 W/mm的RF功率水平，并且以超过300 GHz的频率，即出色的性能，为许多系统应用带来了破坏性变化。但是，晶体管的可靠性是由电场和通道温度驱动的，因此，自加热的意思是，与文献中发布的40 W/mm英雄数据相比，可靠的设备只能运行可靠的RF功率密度为10 W/mm。在英国和整个欧洲也存在相当大的关注，即获得最先进的gan微波技术受到美国ITAR（国际武器法规）限制的限制。 The most advanced capabilities for all elements of GaN HEMT technology, using traditional SiC substrates, epitaxy and device processing currently reside in the US, with restricted access by UK industry.The vision of Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs (GaN-DaME) is to develop transformative GaN-on-Diamond HEMTs and MMICs, the technology step beyond GaN-on-SiC, which will revolutionize the目前限制GAN电子的热管理。挑战在如何将这种不同的材料集成到可靠的设备技术中。结果将是与Gan-On-SIC相比，RF功率增加> 5倍的设备，或者同样有价值的设备，MMIC或PA大小的戏剧性“阶跃变化”收缩率显着，因此通过降低了损失的网络以及降低功率放大器（PA）的成本来提高效率。这代表了能力的破坏性变化，将允许实现新的系统体系结构，例如对于RF寻求者和医疗应用，并实现了交付5G及以后所需的带宽。降低冷却 /可靠性的需求减少将在系统级别节省大量成本。为了使我们的视野成为现实，我们将开发新的钻石生长方法，以最大程度地利用靠近活动gan设备区域的钻石导热性。在目前的Diamond设备中，需要在GAN表面上一个薄的介电层，以使钻石在GAN上成功沉积并成功沉积。不幸的是，这些设备中的大多数热屏障都存在于该gan-二甲梁界面，该界面的导热率差得多。通过消除对钻石生长的介电播种层的需求，或通过优化播种附近的钻石的晶粒结构的需要，这种耐热性的任何降低都将带来巨大好处。新颖的钻石生长将与创新的微流体使用相变材料相结合，这是一种比传统的微流体学更强大的方法，以进一步有助于萃取热量。使用钻石的一个毫无疑问的结果，它的低介电常数将被利用，从而构成微波设计的挑战和机会。在最基本的层面上，该技术的可靠性尚不清楚。例如，在材料水平上，钻石和GAN具有非常不同的热膨胀系数（CTE）。机械上的刚性接口将需要开发，包括互插的GAN-DIAMOND界面。

项目成果

Flow and heat transfer behaviour of nanofluids in microchannels

• DOI: 10.1016/j.pnsc.2018.03.005
• 发表时间: 2018-04-01
• 期刊: PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
• 影响因子: 4.7
• 作者: Bowers, James;Cao, Hui;Ding, Yulong
• 通讯作者: Ding, Yulong

Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

• DOI: 10.1016/j.actamat.2017.08.007
• 发表时间: 2017-10-15
• 期刊: ACTA MATERIALIA
• 影响因子: 9.4
• 作者: Anaya, J.;Bai, T.;Kuball, M.
• 通讯作者: Kuball, M.

Design Considerations of a Dual Mode X-Band EPR Resonator for Rapid In-Situ Microwave Heating

用于快速原位微波加热的双模式 X 波段 EPR 谐振器的设计考虑

• DOI: 10.1007/s00723-022-01463-1
• 发表时间: 2022
• 期刊: Applied Magnetic Resonance
• 影响因子: 1
• 作者: Barter M

Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers

增材式 GaN 固体浸没透镜可提高钻石色心的光子提取效率

• DOI: 10.17863/cam.100726
• 发表时间: 2023
• 作者: Cheng X

Electropositive Nanodiamond-Coated Quartz Microfiber Membranes for Virus and Dye Filtration.

• DOI: 10.1021/acsanm.1c00439
• 发表时间: 2021-03-26
• 期刊: ACS applied nano materials
• 影响因子: 5.9
• 作者: Bland HA;Centeleghe IA;Mandal S;Thomas ELH;Maillard JY;Williams OA
• 通讯作者: Williams OA