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HERMES: High dEnsity Silicon GeRManium intEgrated photonicS

HERMES：高密度硅锗集成光子学

基本信息

批准号：
EP/K02423X/1
负责人：
Frederic Gardes
金额：
$ 12.76万
依托单位：
University of Southampton
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2013
资助国家：
英国
起止时间：
2013 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FK02423X%2F1
关键词：
HERMES dEnsity Silicon GeRManium intEgrated

项目摘要

HERMES is aimed at realising a Ge and GeSi material platform that will be aimed primarily at sustaining optical interconnect circuits to meet the density, data rate and power consumption requirements for the continuation of Moore's law beyond 2020. The ITRS roadmap shows a saturation of the number of electrical pins required for input/output on microprocessors beyond 2020 to about 3000 with current technology. This saturation with an ever increasing latency and a limited on-chip clock speed is a bottle neck that high density optical interconnects have to alleviate. To meet the ITRS 2020 goals the target is clear, with over 100 Tb/s off chip IO capability and power consumption for an entire optical link on the order of 100fJ/bit.This work proposes a solution to this problem and provides a novel means of fabrication to go beyond the capabilities of standard planar silicon photonics circuits. To do so we aim to develop a multilayer optical platform based on localised Germanium/Silicon compounds on insulator compatible with the fabrication of micrometre sized cavity based structures enabling devices such as modulators and detectors. The growth of laser sources based on III/V materials or doped Germanium could also be envisioned but this is beyond the scope of this proposal. The proposed platform will establish a means to fabricate and demonstrate micrometre scale optical devices fit to tackle the 3 dimensional, high density, low voltage and low capacitance requirements needed for very large scale optical integration necessary for optical on chip interconnects.

爱马仕的目标是实现一个Ge和GeSi材料平台，该平台将主要用于维持光学互连电路，以满足2020年以后继续遵循摩尔定律的密度、数据速率和功耗要求。ITRS路线图显示，在目前的技术下，2020年以后微处理器输入/输出所需的电气引脚数量将饱和到约3000个。这种具有不断增加的延迟和有限的片上时钟速度的饱和是高密度光互连必须缓解的瓶颈。为了满足ITRS 2020的目标是明确的，超过100 Tb/s的芯片外IO能力和功耗为整个光链路的顺序为100 fJ/bit.This工作提出了一个解决方案，这个问题，并提供了一种新的制造手段，超越了标准的平面硅光子电路的能力。为此，我们的目标是开发一种基于绝缘体上的局部锗/硅化合物的多层光学平台，该平台与微米尺寸的基于腔体的结构的制造兼容，从而使调制器和检测器等设备成为可能。也可以设想基于III/V材料或掺杂锗的激光源的增长，但这超出了本提案的范围。拟议的平台将建立一种方法来制造和演示微米级光学器件，以满足光学芯片互连所需的超大规模光学集成所需的三维、高密度、低电压和低电容要求。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Cavity-enhanced harmonic generation in silicon rich nitride photonic crystal microresonators

DOI：
10.1063/1.5066996
发表时间：
2019-04
期刊：
Applied Physics Letters
影响因子：
4
作者：
M. Clementi;K. Debnath;M. Sotto;A. Barone;A. Khokhar;T. D. Bucio;S. Saito;F. Gardes;D. Bajoni;M. Galli
通讯作者：
M. Clementi;K. Debnath;M. Sotto;A. Barone;A. Khokhar;T. D. Bucio;S. Saito;F. Gardes;D. Bajoni;M. Galli

N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band