NSF: An investigation into the properties of B12As2, B4C and their heterostructures
NSF:B12As2、B4C 及其异质结构特性的研究
基本信息
- 批准号:EP/D075033/1
- 负责人:
- 金额:$ 53.34万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2007
- 资助国家:英国
- 起止时间:2007 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The properties of the boron-rich icosahedral boride semiconductors B12As2 and B4C lie at the extremes in many categories such as high melting temperatures, hardness, and Seebeck coefficients. Consequently, this novel material class is attractive for applications such as high temperature as well as space electronics, neutron detectors, thermoelectronics and betavoltaic cells, the latter ones for the conversion of heat and nuclear energy, respectively, to electrical energy. A collaborative research effort between Kansas State University, SUNY and Bristol University is proposed to advance the synthesis and characterization of these new materials, as detailed insight is necessary to understand the effects of growth parameters on the structure and composition, and their effects on properties. The US side of the work would be supported by NSF, the UK side by EPSRC with corresponding proposals submitted to NSF and EPSRC. At Kansas State University, the materials will be grown as epitaxial films, bulk crystals and heterostructures. At SUNY, detailed structural characterizations will be performed to understand defect and defect generation in this new material system. At the University of Bristol, Raman scattering, optical and thermopower characterization will determine the properties of this new material system. We will be the first to combine the icosahedral borides into heterostructures to realize new properties to create new applications with potential great benefit to, for example, high temperature thermoelectric applications.
富含硼的二十面体硼化物半导体B12As2和B4C的性质在许多类别中处于极端,例如高熔化温度、硬度和塞贝克系数。因此,这种新型材料类别对于诸如高温以及空间电子学、中子探测器、热电子学和β伏打电池的应用是有吸引力的,后者分别用于将热能和核能转化为电能。堪萨斯州立大学,纽约州立大学和布里斯托大学之间的合作研究工作,提出了推进这些新材料的合成和表征,详细的见解是必要的,以了解生长参数的结构和组成的影响,以及它们对性能的影响。美国方面的工作将得到NSF的支持,英国方面的工作将得到EPSRC的支持,并向NSF和EPSRC提交相应的建议。在堪萨斯州立大学,这些材料将被生长为外延薄膜、块状晶体和异质结构。在纽约州立大学,将进行详细的结构表征,以了解这种新材料系统中的缺陷和缺陷产生。在布里斯托大学,拉曼散射、光学和热功率表征将决定这种新材料系统的性质。我们将是第一个将二十面体硼化物联合收割机结合成异质结构,以实现新的性能,从而创造具有潜在巨大利益的新应用,例如高温热电应用。
项目成果
期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide
碳化硅上二十面体砷化硼薄膜的热导率和塞贝克系数
- DOI:10.1063/1.3486518
- 发表时间:2010
- 期刊:
- 影响因子:3.2
- 作者:Gong Y
- 通讯作者:Gong Y
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Martin Kuball其他文献
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
在块状 GaN 衬底上生长的 AlGaN/GaN HEMT 的非阿累尼乌斯退化
- DOI:
- 发表时间:
2012 - 期刊:
- 影响因子:4.9
- 作者:
M. Ťapajna;N. Killat;J. Moereke;T. Paskova;K. Evans;J. Leach;X. Li;U. Ozgur;H. Morkoç;K. Chabak;A. Crespo;J. Gillespie;R. Fitch;M. Kossler;D. Walker;M. Trejo;G. Via;J. Blevins;Martin Kuball - 通讯作者:
Martin Kuball
Siと接合したダイヤモンド基板上のFETの作製
在与 Si 结合的金刚石基底上制造 FET
- DOI:
- 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
神田 進司;山條 翔二;Martin Kuball;重川 直輝;梁 剣波 - 通讯作者:
梁 剣波
Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition
使用 SiNx 沉积控制 AlGaN/GaN HEMT 中缓冲器引起的电流崩塌
- DOI:
10.1109/ted.2017.2738669 - 发表时间:
2017 - 期刊:
- 影响因子:3.1
- 作者:
W. M. Waller;M. Gajda;S. Pandey;J. Donkers;D. Calton;J. Croon;J. Sonsky;M. Uren;Martin Kuball - 通讯作者:
Martin Kuball
Novel thermal management of GaN electronics - Diamond substrates
GaN 电子器件的新颖热管理 - 金刚石衬底
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Martin Kuball;J. Pomeroy;J. Calvo;Huarui Sun;Roland B. Simon;D. Francis;F. Faili;D. Twitchen;S. Rossi;M. Alomari;E. Kohn;L. Tóth;B. Pécz - 通讯作者:
B. Pécz
Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films
高质量B 12 As 2 单晶外延薄膜生长过程中简并外延的消除
- DOI:
10.1557/opl.2011.316 - 发表时间:
2011 - 期刊:
- 影响因子:0
- 作者:
Yu Zhang;Hui Chen;M. Dudley;Yi Zhang;J. Edgar;Y. Gong;S. Bakalova;Martin Kuball;Lihua Zhang;D. Su;Yimei Zhu - 通讯作者:
Yimei Zhu
Martin Kuball的其他文献
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{{ truncateString('Martin Kuball', 18)}}的其他基金
Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
利用超宽带隙半导体器件技术 (REWIRE) 改造净零
- 批准号:
EP/Z531091/1 - 财政年份:2024
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
超宽带隙 AlGaN 电力电子 - 改造固态断路器 (ULTRAlGaN)
- 批准号:
EP/X035360/1 - 财政年份:2024
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
ECCS-EPSRC - 用于毫米波下一代无线通信的先进 III-N 器件和电路架构
- 批准号:
EP/X012123/1 - 财政年份:2023
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Boron-based semiconductors - the next generation of high thermal conductivity materials
硼基半导体——下一代高导热材料
- 批准号:
EP/W034751/1 - 财政年份:2023
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
范德华 Ga2O3 功能材料外延:革命性的电力电子学
- 批准号:
EP/X015882/1 - 财政年份:2023
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
FINER: Future thermal Imaging with Nanometre Enhanced Resolution
FINER:具有纳米增强分辨率的未来热成像
- 批准号:
EP/V057626/1 - 财政年份:2022
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Materials and Devices for Next Generation Internet (MANGI)
下一代互联网材料和设备(MANGI)
- 批准号:
EP/R029393/1 - 财政年份:2018
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
GaN 电子器件中的亚微米 3D 电场测绘
- 批准号:
EP/R022739/1 - 财政年份:2018
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
集成 GaN-金刚石微波电子器件:从材料、晶体管到 MMIC
- 批准号:
EP/P00945X/1 - 财政年份:2017
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
Quantitative non-destructive nanoscale characterisation of advanced materials
先进材料的定量无损纳米级表征
- 批准号:
EP/P013562/1 - 财政年份:2017
- 资助金额:
$ 53.34万 - 项目类别:
Research Grant
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