Analog and mixed-signal circuits for semiconductor detector microsystems

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The latest advances in metallurgy of compound semiconductors and also in micron-scale photolithography enable fabrication of pixelated semiconductor radiation detectors with a capability to make the high-resolution nuclear imaging feasible. Intelligent sensor interface electronics, able to detect the particle energy and the 3-D position of the interaction event, must connect the semiconductor radiation detector with the digital world. The required functionality of front-end pixel electronics is exacerbated by a large number of the parallel signal channels, each one associated with one pixel of the detector. While the number of pixels currently reaches the range of a few hundred, future applications requiring high-resolution imaging will need to accommodate thousands of channels on chip.