Hierarchical multi-scale thermal transport from nano to macro scales

最先进的IT设备，例如半导体电子、光电子和数据存储介质，包括尺寸为纳米的组件，并且受到皮秒的强烈和非常短的加热脉冲的影响。数据存储密度、晶体管和传输速度的进一步发展受到与热传输相关的问题的强烈限制。这些问题直到最近才出现，这是由于密度增加和设备特征向纳米微型化的结果。在存在热点和薄金属介质的情况下，在纳米尺度下，连续谱傅立叶假设失效，声子和电子对热传递的贡献不能再被忽略。要预测所有相关尺度下的热行为，需要考虑空间尺寸从纳米到厘米，时间尺度从皮秒到几小时的设备组件。

State of the art IT devices, such as semiconductor electronics, optoelectronics and data storage media, include components with dimensions in the nanometres, and are subject to intense and very brief heating pulses of picoseconds. Further advances in data storage densities, transistor and transmission speeds are strongly limited by issues related to heat transfer. These issues have only recently emerged as a consequence of increased densities and miniaturization of the device features into the nanometres. In the presence of hotspots and in thin metallic media, and in the nanoscale regime, the continuum Fourier assumption fails and the contributions of both phonons and electrons to heat transfer can no longer be neglected. To predict the thermal behaviour at all relevant scales, one needs to take into account device components with spatial dimensions from nanometres to centimetres and temporal scales from picoseconds to hours.