Reactive Heteroepitaxial Film Growth - Nucleation and Morphology of Silicide-Silicon Interfaces

调查的目的是研究 在金属-硅界面处新相的成核，以及 确定它们是如何在硅中形成外延层的 半导体 硅化物相的生长将是 研究了原位和后制备。 实验 探测器将确定原子配置（使用扫描 隧道显微镜），振动模式（使用拉曼 散射）和电子态（使用俄歇电子和 X射线光发射光谱）。 界面反应 将根据成核理论进行建模， 实验测量将确定关键集群 尺寸和成核势垒。 底物的影响 拓扑结构（步骤和重建）的成核过程， 将确定后续增长。 这项研究与处理 用于集成电子器件互连和栅极材料 半导体行业。

The objective of the investigation is to study the nucleation of new phases at the metal-silicon interface, and to determine how they can lead to epitaxial layers in silicon semiconductors. The growth of the silicide phases will be studied both in-situ and post preparation. The experimental probes will determine the atomic configurations (using scanning tunneling microscopy), the vibrational modes (using Raman scattering), and the electronic states (using Auger electron and x-ray photoemission spectroscopies). The interface reactions will be modelled in terms of nucleation theory, and the experimental measurements will determine the critical cluster size and the nucleation barrier. The effects of substrate topology (steps and reconstruction) on the nucleation process and subsequent growth will be determined. The research is highly relevant to the processing of interconnect and gate materials for integrated electronics for the semiconductor industry.