Plasma Enhanced Chemical Vapor Deposition of Yttrium Barium Copper Oxide Superconducting Material

具有正确的化学计量比和合适的形貌的可重复生长的薄膜晶体是包含薄膜高温超导体的器件商业化的关键。金属氧化物化学气相沉积(MOCVD)具有满足这些需求的潜力，再加上相对容易扩展到生产量。然而，最近关于MOCVD的工作受到两个主要限制的困扰：(L)。在低于800℃的温度下生长的薄膜是氧化物、氟化物和/或碳酸钡和(2)的无定形混合物。沉积时的薄膜呈花椰菜状，表明薄膜的表面迁移率较低。通过使用等离子体，可以在不提高衬底温度的情况下增加表面迁移率。此外，等离子体辅助激光烧蚀、溅射和反应蒸发已被用于在低至400℃的温度下原位生长超导薄膜，甚至在BaF2作为BaF2前驱体的情况下也是如此。这些结果表明，利用现有的试剂技术，等离子体增强化学气相沉积(PECVD)可能会影响超导薄膜的原位生长。这一第一阶段研究的目标是展示在低于600摄氏度的衬底温度下原位超导薄膜YBaCuO的PECVD。

The reproducible crystal growth of thin films with the correct stoichiometry and appropriate morphology is the key to the commercialization of devices incorporating film high temperature superconductors. Metal oxide chemical vapor deposition (MOCVD) has the potential to meet these needs coupled with relative ease of scaling to manufacturing volumes. However, recent work on MOCVD has been plagued by two major limitations: (l.) films grown at temperatures less than 800C are amorphous mixtures of oxides, fluorides and/or barium carbonate and (2.) as-deposited films exhibit cauliflower-like morphology which is indicative of low surface mobility growth. Surface mobilities can be increased without elevating the temperature of the substrate through the use of a plasma. Moreover, plasma assisted laser ablation, sputtering and reactive evaporation have already been used for the in-situ growth of superconducting thin films at temperatures as low as 400C, even when BaF2 has been used as the Ba precursor. These results suggest that plasma enhanced chemical vapor deposition (PECVD) may effect the in-situ growth of superconducting thin films with the existing reagent technology. The goal of this first phase of research is to demonstrate the PECVD of in-situ superconducting thin films of YBaCuO at substrate temperatures below 600 C.