Ion and Thermal-Induced Transformations in Metal Systems

9307662 Mayer将进行III-V半导体和铜硅体系中离子和热诱导转变/反应的基础材料科学研究。提出研究Cu中合金元素与Cu3Si/Si中氧化物形成的反应。铜中合金元素的研究将是利用铜进行集成电路金属化的一个重要因素。在低工艺温度下控制氧化层的形成可以提供在硅上形成这种氧化物的方法。由于si注入GaAs的电激活是注入剂量率和衬底温度的敏感函数，因此计划通过电子显微镜，电学分析和离子通道的结合来研究离子诱导缺陷相互作用。了解离子注入砷化镓中掺杂剂的活化对集成电路的应用是很重要的。将研究基本的离子-固体相互作用，以及影响半导体材料组合的电子和光学特性的因素，这些组合在电子和光子学应用中具有潜在的优势。所研究的半导体材料组合在电子和光电子器件中具有广泛的适用性；因此，研究结果有望为持续改进用于计算、信息处理和电信的先进设备和集成电路的性能提供基础。＊＊＊

9307662 Mayer Fundamental materials science investigations of ion- and thermal-induced transformations/reactions in III-V semiconductors and copper-silicon systems will be conducted. It is proposed to investigate the reactions of alloying elements in Cu and oxide formation in Cu3Si/Si. The study of alloying elements in Cu will be an important factor in the use of Cu for integrated circuit metallization for adhesion and formation of diffusion barriers. The controlled formation of oxide layers at low process temperatures may offer a method to form this oxide on silicon. Since electrical activation of Si-implanted GaAs is a sensitive function of implantation dose-rate and substrate temperature it is planned to investigate ion induced defect interaction by the combined use of electron microscopy, electrical analysis and ion channeling. %%% An understanding of dopant activation in ion-implanted GaAs is important to integrated circuit applications. Research will be conducted on fundamental ion-solid interactions as well as factors that influence the electronic and optical properties of semiconductor material combinations with potential advantages in electronics and photonics applications. The semiconductor material combinations under study have wide applicability in electronic and optoelectronic devices; thus the research results are expected to provide the basis for continued improvements in the performance of advanced devices and integrated circuits of the type used in computing, information processing, and telecommunications. ***