Vertical Cavity Surface Emitting LED/Laser Based on Er- Doped Porous Poly-Si on Glass Substrates

本计画将利用多孔矽（以玻璃上的多晶多孔矽制成）植入铒，以制作垂直腔面射发光二极体/雷射。Spire是第一个证明：（a）具有量子限制特性的多孔多晶硅和（B）来自掺铒多孔硅的强室温红外发射。他们的结果清楚地表明，室温下多孔硅中Er的光发射效率与用于商业红外LED的In0.53Ga0.47As材料相当。Er注入体硅的红外光谱强度对温度的依赖性是阻碍其在光电子领域应用的主要障碍。 结果表明，当温度从77 K升高到室温时，多孔硅的红外强度下降约50%，而体硅中的Er下降了1000倍。在第一阶段，他们将在玻璃基板上存款透明导体（如ITO），然后是多晶硅。在加工以制造具有量子限制特性的多孔多晶硅之后，样品将被注入铒并退火以使硅纳米结构再结晶。最后，他们将存款薄金属膜镜/接触，完成多孔多晶硅基红外肖特基LED。第二阶段将集中在设备的优化和商业化，以及光学腔的形成，以产生红外激光器。

This project will fabricate a vertical cavity surface-emitting LED/laser by implanting Er into porous silicon (produced from poly-porous silicon on glass). Spire was the first to demonstrate: (a) porous polysilicon with quantum-confined properties and (b) strong, room-temperature IR emission from Er-doped porous Si. Their results clearly indicate that optical emission efficiency of Er in porous silicon at room temperature is comparable to In0.53Ga0.47As material, used for commercial infrared LEDs. Strong temperature dependence of IR intensity for Er-implanted bulk Si is a major obstacle preventing the application of Si:Er in optoelectronics. Results show about a 50% decrease in IR intensity for porous Si when the temperature is raised from 77K to room temperature, as compared to a decrease of a factor of 1000 for Er in bulk Si. In Phase I, they will deposit a transparent conductor (such as ITO) onto a glass substrate, followed by polysilicon. After processing to fabricate porous polysilicon with quantum-confined properties, samples will be implanted with erbium and annealed to recrystallize the silicon nanostructures. Finally, they will deposit a thin metal film mirror/contact, to complete a porous polycrystalline silicon-based infrared Schottky LED. Phase II will concentrate on optimization and commercialization of the devices, and on formation of optical cavities to produce IR lasers.