Halogen Passivation of GaAs (100)

小行星9527814 本研究项目旨在了解GaAs上的基本卤素化学，以及表面化学，结构和电子特性之间的相关性。 此外，该项目还包括将化学钝化研究结果应用于器件制造的活动，开发CaF2或SrF2栅极绝缘体和卤素钝化的非钉扎GaAs表面。 对于基本的钝化研究，将通过用差分泵浦MBE源给料F2、Cl2、Br2、I2并循环衬底温度以从表面去除卤化砷或多卤化镓来形成原子钝化层。 样品将在STM室中进行表征，XPS和STM用于检测带隙内费米能级的位置。 从这个研究项目中获得的知识和理解，预计将有助于在一个根本的方式，以提高性能的先进化合物半导体材料用于计算，信息处理和电信提供一个基本的理解和基础，设计和生产所需的先进设备和电路的材料的改进的层状结构。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。 ***

9527814 Kummel This research project is an effort to understand basic halogen chemistry on GaAs, and the correlations between surface chemistry, structure and electronic properties. Additionally, the project includes an activity to apply the results of the chemical passivation study to device fabrication with development of a gate insulator of CaF2 or SrF2 and a halogen passivated, un-pinned GaAs surface. For basic passivation studies an atomic passivation layer will be formed by dosing of F2, Cl2, Br2, I2 with a differentially pumped MBE source and cycling the substrate temperature to remove arsenic halides or gallium polyhalide from the surface. Samples will be characterized in an STM chamber with XPS and STM used to detect the position of the Fermi level within the bandgap. %%% The knowledge and understanding gained from this research project is expected to contribute in a fundamental way to improving the performance of advanced compound semiconductor materials used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved layered structures of materials required for advanced devices and circuits. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***