Metallization and Contact Formation for Silicon Technology

这个合作的多学科研究项目解决了硅基系统中的金属化和接触形成：与Cu相比，银薄膜作为互连金属化的性质的研究，以及硅绝缘体（SOI）结构浅层接触的硅化物形成。目的是研究ag基自钝化层形成的基本特性，利用难熔金属添加，粘附和扩散屏障，与之前进行的广泛的一系列研究进行比较。在Si on insulator（SOI）结构上形成硅化物对自对准硅化物（SALICIDE）技术有严格的材料要求，本研究的目的是研究CoSix(x1)/Ti体系绕过CoSi的形成从而减少空隙的形成，研究使用Pd而不是Ti作为插入薄层形成外延CoSi2层，以及研究SOI结构中Si外延层较薄层中的应力。透射电子显微镜，离子束分析（RBS和通道）和电气诊断都将被常规用于表征在研究过程中合成和制造的薄膜和结构。提出的金属化和接触形成的基础研究有望为先进微电子器件和电路的技术相关的基础材料科学知识做出贡献。从本研究项目中获得的知识和理解有望通过为设计和生产改进材料提供基本的理解和基础，以一般方式改善用于计算，信息处理和电信的先进设备和电路的性能。该计划的一个重要特点是通过在基础和技术上重要的领域培养学生，将研究和教育结合起来。* * *

9528391 Mayer This collaborative multidisciplinary research project addresses metallization and contact formation in silicon- based systems: investigation of the properties of Ag films as interconnecting metallization in comparison with Cu, and silicide formation for shallow contacts to Si on insulator(SOI) structures. The objective is to investigate the fundamental properties of Ag-based formation of self- passivating layers, adhesion, and diffusion barriers utilizing refractory metal additions in comparison with an extensive series of investigations of Cu metallization with Ti addition conducted previously. Silicide formation on Si on insulator(SOI) structures has stringent materials requirements for the self-aligned-silicide(SALICIDE) technology, and the objective of this study is to investigate the CoSix(x1)/Ti system to bypass the formation CoSi, thus reducing void formation, to investigate the use of Pd rather than Ti as an interposing thin layer to form epitaxial CoSi2 layers, and to investigate the stress in thinner layers of the Si epi-layers in the SOI structure. Transmission electron microscopy, ion beam analysis(RBS and channeling), and electrical diagnostics will all be employed routinely to characterize films and structures synthesized and fabricated during the course of the research. %%% The proposed basic investigations of metallization and contact formation are expected to contribute basic materials science knowledge of technological relevance to advanced microelectronic devices and circuits. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of st udents in a fundamentally and technologically significant area. ***