3D Integration of Nonvolatile Nanomagnetic Logic

磁场耦合是一种新兴的纳米计算模式，信息的传播和处理是通过单域磁性粒子之间的磁相互作用来实现的。这一概念的可行性最近已经通过实验证明了由坡莫合金点光刻而成的磁性多数栅极。我们从理论上证明了磁场耦合电路可以实现快速、密集的计算，每次开关只消耗很少的kT功率。我们的目标是基于离子束图案化磁性多层膜的场耦合电路的设计和实验演示。这种多层膜表现出很强的面外各向异性，从结构角度来看，这是非常理想的，并且可以通过离子辐照来微调和改善层/点的磁性。这些点的磁特性被很好地控制，这使得实现复杂的场耦合结构成为可能。我们将不仅实现一个独立的设备，而且将实现一个小的、尽管完整的磁计算系统。我们特别关注电气输入/输出和集成时钟系统的设计和制造。埋在磁性层下的亚微米级电线将为磁体的同步切换提供时钟磁场。我们的研究可能会导致一类在低功耗计算中具有深远应用潜力的新的磁电子器件。磁计算组件的制造与硅技术兼容，可以增强微电子设备的功能。

Magnetic field-coupling is an emerging, new paradigm of nanoscale computing, where information is propagated and processed by the magnetic interaction of single-domain magnetic particles. The feasibility of this concept has been recently demonstrated experimentally by a magnetic majority gate, which was lithographically fabricated from Permalloy dots. We have shown theoretically that magnetic field-coupled circuits can achieve fast and densely integrated computing which dissipates only few kT power per switching.Our goal is the design and experimental demonstration of field coupled circuits, which are based on ion-beam patterned magnetic multilayers. Such multilayers exhibit strong out-ofplane anisotropy, which is very desirable from the architectural point of view, and the magnetic properties of the layers / dots can be fine-tuned and improved by ion irradiation. Magnetic characteristics of the dots are well-controlled, which makes the realization of complex field-coupled structures feasible.We are going to realize not only a stand-alone device, but a small, albeit complete magnetic computing system. We put special focus on the design and fabrication of electrical inputs / outputs and an integrated clocking system. Submicron-scale electrical wires, buried under the magnetic layers will provide clocking fields for synchronized switching of magnets.Our research could result in a new family of magnetoelectronic devices with far-reaching application potential in low-power computing. The fabrication of magnetic computing components is compatible with silicon technologies and they can enhance the functionality of microelectronic devices.