GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
批准号:
9901064
负责人:
Leonid Tsybeskov
金额:
$26.06万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-07-01 至 2001-11-30
中文摘要
这个GOALI项目是摩托罗拉和罗切斯特大学之间的合作研究活动。该项目涉及基础材料科学合成和加工问题,硅纳米晶体层状结构的制造和探索性应用。将研究结构表征、表面和界面应力在受控a-Si再结晶中的作用以及相关问题,如Si纳米晶体尺寸分布、定位(包括横向分离)、晶体取向和表面钝化。硅量子点电子学,包括高密度存储单元和其他基于单电子现象的器件将被评估。这项研究将由来自罗切斯特大学和摩托罗拉的几名研究人员与罗切斯特理工学院、加拿大渥太华国家研究委员会和华盛顿特区海军研究实验室合作进行。该计划代表了学术机构、政府实验室和工业界之间的伙伴关系,产生了技术专家、实验家和理论家之间的合作,以解决硅纳米材料科学和技术的基本问题。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/光子器件的重要制造方面提供基础材料科学知识。从研究中获得的基本知识和理解有望有助于提高用于计算和通信的先进设备和电路的性能。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。该项目的教育特色包括为罗切斯特大学和罗切斯特理工学院的学生提供特殊机会,让他们体验学术和工业研究的观点和方法,并使用特殊的仪器和设施。该项目由MPS OMA(多学科活动办公室)共同支持
英文摘要
This GOALI project is a collaborative research activity between Motorola and the University of Rochester. The project addresses fundamental materials science synthesis and processing issues, fabrication, and exploratory applications of Si nanocrystal layered structures. Structural characterization, and modeling of the role of surface and interface stress in controlled a-Si recrystallization and related issues such as Si nanocrystal size distribution, positioning including lateral separation, crystallographic orientation, and surface passivation will be studied. Silicon quantum dot electronics, including high-density memory cells and other devices based on single-electron phenomena will be evaluated. The research will be performed by several investigators from the University of Rochester and Motorola in collaboration with Rochester Institute of Technology, the National Research Council, Ottawa, Canada, and the Naval Research Laboratory, Washington, DC. The program represents a partnership between academic institutions, government laboratories, and industry, yielding a collaboration between technologists, experimentalists, and theorists to address basic issues in silicon nanoscale materials science and technology.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important fabrication aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute to improving the perform-ance of advanced devices and circuits for computing and communications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. Educational features of the project include special opportunities for students from the University of Rochester and Rochester Institute of Technology to experience academic and industrial research perspectives and approaches, and access to special instrumentation and facilities. The project is co-supported by the MPS OMA(Office of Multidisciplinary Activities).***
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GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
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批准号:0296048
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项目类别:Standard Grant
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资助金额:$26.06万
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U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
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资助金额:$1.75万
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海外基金