MRI: Development of a Surface Scattering System for Real-time X-ray Studies of Growth and Processing

该奖项用于分子束外延(MBE)薄膜生长和等离子体处理表面改性的同步辐射X射线原位研究系统的开发。该系统将允许广泛的X射线访问样品，并结合标准表征工具(例如RHEED)，以更好地将同步加速器结果与内部研究相关联。在薄膜生长方面，在分子束外延生长III-V氮化物薄膜的过程中，特别关注了GaN和Ga-Al-In氮化物合金的表面结构。在其他问题中，研究将集中在合金系统中缓冲层的形成和原子有序/相分离。等离子体处理过程中表面结构的研究最初将集中在硅上，因为它已经被广泛地用互补的方法研究。未来的实验将针对化合物半导体表面的处理，如砷化物和氮化物的表面。接受该系统培训的学生将接触到广泛的材料问题，从基本的表面结构研究到了解表面结构如何影响设备性能。他们将做好充分的准备，在毕业后将他们的经验和新的见解带到工业界和学术界。该奖项用于开发一种表面散射系统，用于实时X射线生长和加工研究。该系统将使对半导体行业至关重要的两个工艺的基础研究成为可能。第一种是分子束外延，它允许薄膜一次只生长一个原子层，这是一种高度受控的方法；第二种是用高能粒子在一系列过程中对表面进行修饰，这一系列过程统称为“等离子体处理”。使用来自同步加速器的非常强的X射线束，当这些重要的技术过程正在发生时，表面的原子结构将被研究。从这些实验中获得的基本认识可能最终导致为光电子和大功率工业生长新的高质量材料的方法，以及整个电子行业更好的半导体表面刻蚀和钝化方法。此外，这种设备将提供一种独特的资源，在这些快速发展的跨学科领域培训学生，这些领域跨越了物理、材料科学和电气工程的传统界限。

This award funds the development of a system for the in-situ synchrotron x-ray study of thin film growth with molecular beam epitaxy (MBE) and of surface modification with plasma processing. The system will permit extensive x-ray access to the sample and incorporate standard characterization tools (e.g. RHEED) to better correlate the synchrotron results with in-house studies. In the area of film growth, particular attention is paid to surface structure during the MBE growth of III-V nitride films, both GaN and Ga-Al-In nitride alloys. Among other issues, research will focus on buffer layer formation and atomic ordering/phase separation in the alloy systems. Investigations of surface structure during plasma processing will initially focus on silicon, since it has been widely studied with complementary methods. Future experiments will be directed at processing of compound semiconductor surfaces, such as those of the arsenides and nitrides. Students trained with the system will be exposed to a broad range of materials issues ranging from basic surface structure research to understanding how surface structure can effect device performance. They will be well prepared to bring their experience and new insights to industry and academia following graduation.This award funds the development of a surface scattering system for real-time x-ray studies of growth and processing. The system will enable the fundamental study of two processes that are vital for the semiconductor industry. These are, first, Molecular Beam Epitaxy, which allows the highly controlled growth of thin films a single atomic layer at a time, and, second, the modification of surfaces with energetic particles in a set of processes that is known collectively as "plasma processing". Using a very intense beam of x-rays from a synchrotron source, the atomic structure of surfaces will be investigated as these technologically important processes are occurring. The basic understanding gained from these experiments may eventually lead to methods for growing new high quality materials for the optoelectronics and high power industries and to better methods of etching and passivating semiconductor surfaces throughout the electronics industry. In addition, this equipment will provide a unique resource to train students in these rapidly developing interdisciplinary areas that cut across traditional boundaries of physics, materials science and electrical engineering.