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Mixed Signal Electronic Technologies: Joint Initiative Between NSF and SRC : Three-Dimensional Impedance Engineering of Substrates for Mixed Signal Integrated Circuit Applications

Mixed Signal Electronic Technologies: Joint Initiative Between NSF and SRC : Three-Dimensional Impedance Engineering of Substrates for Mixed Signal Integrated Circuit Applications
混合信号电子技术:NSF 和 SRC 之间的联合倡议:混合信号集成电路应用基板的三维阻抗工程
批准号:
0120368
负责人:
Ya-Hong Xie
金额:
$30.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-08-01 至 2004-12-31

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中文摘要
翻译
0120368对基于硅VLSI的混合信号集成电路存在技术需求。这种技术将能够降低混合信号IC的外形系数、功耗和电路设计复杂性,这些IC是便携式电子产品、个人通信器、计算机硬盘驱动器的读写通道和用于互联网访问的调制解调器的核心。目前,串扰问题阻碍了技术的进步,对此没有可行的解决方案。私人投资者提出了一个创新的解决方案。在噪声产生电路和噪声敏感电路之间插入类似于护城河的贯穿晶片的多孔硅区,以隔离电磁干扰(EMI)。这种隔离是通过多孔硅区的高阻抗特性实现的,而不是通过硅衬底的替代路径来实现EMI到达真正的接地。同样的多孔硅区也可用于将高性能无源元件(电感和电容器)与衬底隔离。类似的多孔硅护城河可以通过在内部孔表面涂覆金属来转变为高导电区。高导电性区域可用作射频干扰的接地屏蔽。或者,可以制造穿透晶片的多孔硅“柱”,然后去除多孔硅。这将导致深度通孔。金属可以被引入到通孔中,从而形成法拉第笼型结构,用于屏蔽电磁干扰。这项研究的合适名称是衬底的三维阻抗工程。在这项拟议的研究中,PI将仔细检查所有三种射频串扰隔离方法的有效性。他们将重点关注从100兆赫到40兆赫以上的频率范围。这是硅基混合信号集成电路在不久的将来的目标频率范围。通过将这种基于多孔硅的综合工艺模块引入硅VLSI工艺流程,它们将为目前硅混合信号集成电路技术中存在的几个最具挑战性的问题提供独特的解决方案。他们的研究将解决与实现这一创新相关的以下关键问题。这些问题包括隔离区的隔离效果、隔离区的长期稳定性、首选的掩蔽方案和材料、将金属引入多孔硅区的方法、有金属涂层和没有金属涂层的多孔硅的机械完整性、与硅VLSI工艺的兼容性以及潜在的污染问题。它将从项目开始时的主要材料和加工问题转移到项目结束时的射频电路制造和测试。这项研究将与Conexant和Agere Systems合作进行,Conexant将在那里制造他们的测试芯片,Agere Systems(通过SRC支持我们对多孔硅的研究)是他们开始对这一具有战略重要性的领域进行研究的地方。除了预期的技术影响外,拟议的研究还将通过让新一代工程师接触到信息技术的前沿来发挥教育他们的重要作用。对这样一个项目进行论文研究,将使他们在基础材料科学的综合领域获得教育,并通过与业界的合作,敏锐地意识到实用设备的需求。他们将成为创新劳动大军中的一员,创新劳动大军一直是推动我们社会繁荣的动力。
英文摘要
0120368XieTechnological demand exists for mixed-signal integrated circuits based on Si VLSI. Such technology will enable the reduction of the form factor, power consumption, and circuit design complexity of mixed-signal IC's that are the core of portable electronics, personal communicators, the read-write channels of computer hard drives, and modems for internet access. The advancement of the technology is currently hampered by the cross-talk issue, for which there is no viable solution insight.The PIs propose an innovative solution to the problem. Through-the-wafer porous Si regions analogous to a moat are inserted between the noise producing and noise sensitive circuits to isolate electromagnetic interference (EMI). Such isolation is achieved via the high impedance nature of the porous Si region comparing to the alternative pathway of Si substrate for the EMI to reach true ground. The same porous Si regions can also be used to isolate high performance passive components (inductors and capacitors) from the substrate. Similar porous Si moat can be converted to highly conductive regions by coating the internal pore surfaces with metal. Highly conductive regions can serve as grounded shields for RF interference. Alternatively, through-the-wafer porous Si "posts" can be fabricated with porous Si removed afterward. This will result in deep vias. Metal can be introduced into the vias, resulting in Faraday cage type of structures for shielding electromagnetic interference. An appropriate name for the proposed research is three-dimensional impedance engineering of the substrate.In the proposed research, The PIs will scrutinize the effectiveness of all three approaches for RF cross-talk isolation. They will focus on the frequency range from 100 MHz up to above 40 GHz. This is the targeted frequency range by Si-based mixed-signal integrated circuits for the near future. By introducing this porous Si-based comprehensive process module into Si VLSI process flow, they will provide a unique solution to several of the most challenging issues present today in the Si mixed-signal IC technology.Their research will address the following critical issues relevant to the realization of the innovation. The issues include the isolation effectiveness, long-term stability of the isolation region, the preferred masking scheme and material, the method for introducing metal into the porous Si region, the mechanical integrity of the porous Si with and without metal coatings, the compatibility with Si VLSI processing, and potential contamination concerns.The proposed research encompasses materials science and electrical engineering. It will migrate from mostly material and processing issues at the beginning of the project, to RF circuit fabrication and testing towards the end of the project. The research will be carried out in collaboration with Conexant where their test chips will be fabricated, and Agere Systems (supporting our research in porous Si via SRC) where their initial study into this strategically important field started.In addition to the expected technological impact, the proposed research will serve the important function of educating a new generation of engineers by exposing them to the frontier of the information technology. Conducting thesis research on such a project will give them an education in the combined areas of fundamental materials science and a keen sense of the requirement of practical devices through the collaboration with industry. They will become members of the innovative workforce that has been the drive force for the prosperity of our society.
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