Atomic and Electronic Structure of Clusters on Silicon Surfaces

为了弥合从气相掺杂硅团簇到团簇相关器件的差距，该项目解决了在硅表面生长的金属硅化物团簇。这样的结构可以作为未来更大规模应用的基石。利用分子束外延（MBE）在超高真空（UHV）条件下自组织制备了这些簇，并利用扫描隧道显微镜（STM）和光谱学（STS）研究了它们的原子结构和单个电子性质。根据制备条件，如衬底取向、暴露或生长和退火温度，预计会形成不同的团簇结构。特别强调的是簇内的原子结构，可能在一维或二维超晶格中的有序排列，以及它们的电子状态的空间分辨研究。在合作中，计划使用移动特高压转移装置进行拉曼实验，也用于研究来自合作项目的团簇和富勒烯样品。

In order to bridge the gap from doped silicon clusters in the gas phase to cluster-related devices, this project addresses metal silicide clusters grown on silicon surfaces. Such structures may act as building blocks for future larger-scale applications. The clusters will be prepared in ultra-high vacuum (UHV) by self-organization using molecular beam epitaxy (MBE), and their atomic structure and individual electronic properties will be studied using scanning tunneling microscopy (STM) and spectroscopy (STS). Different cluster structures are expected to form, depending on the preparation conditions such as substrate orientation, exposure, or growth and annealing temperature. Special emphasis lies on the atomic structure within the clusters, a possibly ordered arrangement in one- or two-dimensional superlattices, and the spatially resolved study of their electronic states. In cooperation Raman experiments are planned using a mobile UHV transfer, being also used for studies of cluster and fullerene samples from collaborating projects.