III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications
III-Nitride Deep Ultraviolet Photonic Materials and Structures - Growth, Optical Studies and Applications
批准号:
0504601
负责人:
Jingyu Lin
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-05-01 至 2009-04-30
中文摘要
该项目代表了开展基础研究所需的多方面方法,以进一步推进半导体深紫外(DUV)光子学的科学和技术。主要目标之一是确定和理解与富铝AlGaN合金和AlN外延生长和掺杂相关的基本机制。特别是,在晶体生长过程中,作为补偿中心的天然缺陷的形成机制,将通过采用高质量的AlN脱膜模板,离轴衬底,脉冲生长方案和δ掺杂来探索。基于富al AlxGa1-xN合金体系的DUV光子材料和器件的研究活动和基本认识仍处于初级阶段。本研究项目致力于对AlGaN DUV光子材料系统的基本理解以及解决重要的应用问题。本项目旨在解决电子/光子材料科学中具有高技术相关性的主题领域的基础研究问题。该项目的一个重要特点是非常重视教育,并将研究与教育相结合。通过直接参与研究,学生将在先进半导体材料、纳米制造技术、半导体物理、半导体材料制造和器件加工等领域获得独特的学习和发现机会,这些领域采用了最先进的外延生长、光刻图像化、等离子体蚀刻和先进材料表征
英文摘要
This project represents a multifaceted approach to carry out fundamental research needed to further advance the science and technology of semiconductor deep UV (DUV) photonics. One of the major objectives is to identify and understand fundamental mechanisms associated with epitaxial growth and doping of Al-rich AlGaN alloys and AlN. In particular, mechanisms for the formation of native defects during crystal growth, which act as compensating centers, will be explored by employing a high quality AlN epilayer template, off-axis substrates, a pulsed growth scheme, and delta doping. Research activities and basic understanding on DUV photonic materials and devices based upon the Al-rich AlxGa1-xN alloy system are still in early stages. This research project strives for fundamental understanding of the AlGaN DUV photonic material system as well as addressing important applications. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having high technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Through direct involvement in research, students will have unique learning and discovery opportunities in the areas of advanced semiconductor materials, nano-fabrication techniques, semiconductor physics, semiconductor materials fabrication and device processing using state-of-the-art epitaxial growth, lithographic patterning, plasma etching, and advanced materials characterization.***
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