The Chemistry of Etching: Anisotropic Si(100) Etchants and Hillock Suppression

康奈尔大学化学系的Hines教授和她的同事正在研究在水蚀刻过程中控制硅表面形态的基本机制。在分析和表面化学项目的支持下，这个小组正在使用扫描探针显微镜结合动力学蒙特卡罗方法来研究硅表面湿蚀刻过程中的表面形态。他们专注于导致特定形态的化学因素，并致力于开发一种能够产生原子平面Si（100）表面的蚀刻剂。对硅湿蚀刻工艺的基本理解将对电子设备的商业生产产生重大影响。在这一领域培养的学生将为半导体行业做出重要贡献。对硅表面湿化学蚀刻过程中表面形态演变的基本理解是本研究项目的目标。Hines教授和她的团队正在使用扫描探针显微镜和模型计算来检查蚀刻剂对加工硅表面形貌的化学影响。这项研究的信息对于半导体工业中高效、定向工艺的发展是重要的。

AbstractCHE-0515436Hines/CornellProfessor Hines and her coworkers in the Department of Chemistry at Cornell University are examining the fundamental mechanisms that control surface morphology of silicon during aqueous etching processes. With the support of the Analytical and Surface Chemistry Program, this group is using scanning probe microscopy coupled with kinetic Monte Carlo methods to study the surface morphology during the wet etching of silicon surfaces. They are focusing on the chemical factors that lead to specific morphologies, and are working to develop an etchant capable of producing atomically flat Si(100) surfaces. A fundamental understanding of the silicon wet etching process would strongly impact the commercial production of electronic devices. Students trained in this area will make important contributions to the semiconductor industry. A fundamental understanding of the evolution of surface morphology during the wet chemical etching of silicon surfaces is the goal of this research project. Professor Hines and her group are using scanning probe microscopy and model calculations to examine the chemical effects of etchants on the morphology of the processed silicon surface. Information from this research is important for the development of efficient, directed processes in the semiconductor industry.