Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures

技术.本计画主要研究在矽基板上生长光学活性三-五族氮化物奈米线半导体异质结构及其光电特性。基于偏振和带隙工程的基础研究和结合，紫外和可见光发射器和探测器与硅衬底集成的演示是预期的。纳米线将在没有外来金属催化剂颗粒的情况下生长，并且下面的硅衬底将用于将空穴隧道注入到难以用传统受主掺杂剂掺杂p型的III-V族氮化物纳米线中。通过与AlInGaN合金的宽范围的带隙可行，将生长和表征的GaN探测器和发射器。该项目的一个主要部分涉及纳米线不需要断开（或“收获”）的结构，而是利用本征结构开发应用，这些应用不容易用III-V氮化物薄膜或单独用硅实现。这些混合异质结构提供了不同材料的优点，而没有晶格匹配的约束。非技术性。该项目解决了具有技术相关性的电子/光子材料科学主题领域的基础研究问题。该项目将涉及本科生在学术学期以及夏季。理论导向的学生将参与该项目的能带图和器件结构的模拟水平。实验倾向的学生将参与纳米线/硅器件的制造及其表征。他们将通过参加会议和展示他们的工作直接与研究生和PI合作。根据结果，本科生将被鼓励发表他们的工作。该项目将培养纳米电子学前沿领域的研究生。除了扩大参与者正在管理的现有外联方案外，还提议开展两项新的活动，特别侧重于代表性不足的群体：1）在“拓展视野”研讨会上演示纳米级扫描探针技术，年轻的女学生聚集在一起，让她们尽早接触科学和技术如何在各种职业中应用，（2）在圣玛丽学院双学位方案下为女大学生设计的研究项目。通过出版物和在会议上介绍来传播研究成果，并将其纳入研究人员讲授的课程，将确保向尽可能广泛的受众推广拟议的研究。

Technical. This project addresses growth and optoelectronic properties of optically active III-V Nitride nanowire semiconductor heterostructures on silicon substrates. Based on the fundamental studies and combination of polarization and bandgap engineering, demonstration of ultraviolet and visible light emitters and detectors integrated with silicon substrates is expected. Nanowires will be grown without foreign metal catalyst particles, and the underlying silicon substrate will be used to tunnel-inject holes into the III-V nitride nanowires that are difficult to dope p-type with traditional acceptor dopants. Through the wide range of bandgaps viable with AlInGaN alloys, multicolor detectors and emitters will be grown and characterized. A major part of the pro-ject involves structures where the nanowires do not need to be broken off (or 'harvested'), but to exploit the intrinsic structure to develop applications that are not easily achievable either with III-V nitride thin films, or with silicon alone. These hybrid heterostructures provide advantages of dissimilar materials without the constraint of lattice-matching. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having technological relevance. The project will involve undergraduate students during the academic semesters as well as the summer. Theoretically oriented students will be involved in the project at the level of simulations of band diagrams and device structures. Experimentally inclined students will be involved at the level of fabrication of nanowire/silicon devices and their characterization. They will work directly with graduate students and the PIs by attending meetings and presenting their work. Depending on the results, the undergraduate students will be encouraged to publish their work. The project will result in the training of graduate students in a forefront area of nanoelectronics. Additional to expanding the existing outreach programs that the PIs are managing, two new activities are proposed with a special focus on under-represented groups: 1) experimental demonstration of nanoscale scanning probe techniques at the Expanding Your Horizon workshops where young school girls gather for their early exposure to how science and technology are employed in various careers, and 2) re-search projects designed for women undergraduate students under the Dual Degree Program at St. Mary's College. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.