GOALI: Precursors for the Atomic Layer Deposition of Metallic Films

制造计算机芯片和其他高科技设备需要非常高质量的金属薄膜，但是目前生长这些材料的方法还不足以完成手头的任务。韦恩州立大学的温特博士和他的工业合作伙伴，SAFC Hitech的拉维·坎乔利亚博士，正在研究新的分子和化学反应，使金属薄膜的生长成为可能。他们特别感兴趣的是了解分子结构的变化如何影响他们制造高纯度薄膜的能力。该团队采用了一种被称为原子层沉积的技术，这种技术允许金属薄膜以精确的厚度和空间分辨率生长，即使是在制造计算机芯片所需的窄而深的特征中。在这个项目中获得的基本理解推动了未来新分子的设计，以生长薄膜和创造新设备。温特博士的研究项目吸引了从本科生到博士后等各个层次的学生，并在为训练有素的未来劳动力培养科学家方面产生了更广泛的影响。在这个研究项目中，韦恩州立大学的Winter博士和SAFC Hitech的Ravi Kanjolia博士在大分子、超分子和纳米化学（MSN）项目的支持下，开发了新的前驱体和沉积方法，用于通过原子层沉积（ALD）来生长镍、钴、锰、钛、铝和镁薄膜。该项目需要合成和表征具有优化原子层沉积前驱体性能的金属硅基配合物，金属硅基配合物与互补金属配合物或有机还原剂的溶液反应。研究人员确定了产生金属粉末的反应物对，将溶液反应转变为原子层沉积工艺，探索了在各种衬底上选择性生长金属，并通过原子层沉积方法生长钛/铝合金薄膜。该项目与SAFC Hitech合作，实现了先进的原子层沉积前驱体评估，大规模前驱体合成，先进生长试验和技术转移到工业。更广泛的影响包括培训研究生和本科生，通过将包括韦恩州立大学和SAFC Hitech人员在内的GOALI项目合作小组聚集在一起，加强研究和教育基础设施，为韦恩州立大学的学生在SAFC Hitech进行工业实习，以及为正电金属薄膜提供新的前体和原子层沉积工艺的潜在社会效益。

Thin metallic films of very high quality are required in the manufacture of computer chips and other high technology devices, but current methods for growing these materials are not adequate to the task at hand. Dr. Winter of Wayne State University and his industrial collaborator, Dr. Ravi Kanjolia of SAFC Hitech, are investigating new molecules and chemical reactions that can enable the growth of thin metal films. They are especially interested in understanding how changes in the structures of the molecules affects their ability to fabricate high purity films. The team employs a technique known as atomic layer deposition which allows metal films to be grown with precise thicknesses and spatial resolution, even in narrow and deep features required in the manufacture of computer chips. The fundamental understanding gained in this project advances the future design of new molecules to grow films and create new devices. Dr. Winter's research program attracts students at many levels, ranging from undergraduates to postdoctoral fellows, and has broader impact in educating scientists for a well-trained future workforce. In this research program, Dr. Winter of Wayne State University and his industrial collaborator Dr. Ravi Kanjolia of SAFC Hitech are supported by the Macromolecular, Supramolecular and Nanochemistry (MSN) Program to develop new precursors and deposition methods for the growth of nickel, cobalt, manganese, titanium, aluminum, and magnesium thin films by atomic layer deposition (ALD). The project entails the synthesis and characterization of metal silyl complexes with optimized atomic layer deposition precursor properties, solution reactions of the metal silyl complexes with complementary metal complexes or organic reducing agents. The researchers identify reactant pairs that afford metal powders, transform the solution reactions to atomic layer deposition processes, explore of selective metal growth on various substrates, and grow titanium/aluminum alloy films by atomic layer deposition. This project is in collaboration with SAFC Hitech, which enables advanced atomic layer deposition precursor evaluation, large scale precursor synthesis, advanced growth trials, and technology transfer to industry. The broader impacts involve training graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for electropositive metal thin films.