International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) XVIII, San Diego CA, July 10-15, 2016
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) XVIII, San Diego CA, July 10-15, 2016
批准号:
1639797
负责人:
Russell Dupuis
金额:
$0.6万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-06-15 至 2017-03-31
中文摘要
拟议的项目寻求为研究生和博士后提供资金支持,以帮助那些将在2016年7月10日至15日在加利福尼亚州圣地亚哥举行的会议上发表演讲的人支付会议注册费用和相关旅费。会议将讨论金属有机气相外延(MOVPE)材料和器件技术的最新进展。主题包括外延过程的基础研究和建模、第三类宽带隙氮化物材料和器件、III-V半导体和器件、窄禁带材料和器件、II-VI材料和器件、纳米线、纳米结构和低维结构的生长,将有特邀演讲和投稿演讲。会议将为研究生、博士后研究员和所有与会者提供交流机会和智力刺激。预计该会场将吸引相当数量的STEM代表不足群体的成员。会议记录将发表在一份获得广泛电子发行的期刊上。
英文摘要
The proposed project seeks financial support for graduate students and Post-Doctoral Fellows to help defray the cost of conference registration and related travel expenses for those who will be giving presentations at a conference that will be held July 10-15, 2016 in San Diego, CA, The conference will address the latest advances in Metalorganic Vapor Phase Epitaxy (MOVPE) materials and device technologies. Topics to be addressed include among other Fundamental Studies and Modeling of Epitaxial Processes, Wide-Bandgap Group-III Nitride Materials and Devices, III-V Semiconductors and Devices, Narrow Bandgap Materials and Devices, II-VI Materials and Devices, Growth of Nanowires, Nanostructures and Low-dimensional Structures, There will be both invited talks and contributed presentations. The conference will provide, networking opportunities and intellectual stimulation for graduate students, Post-Doctoral Fellows and all attendees. It is expected that the venue will attract a significant number of members of underrepresented groups in STEM. The proceedings will be published in a journal which receives wide electronic distribution.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys
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批准号:1410874
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2014
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负责人:Russell Dupuis
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依托单位:
International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014
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批准号:1439509
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:2014
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负责人:Russell Dupuis
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依托单位:
COLLABORATIVE RESEARCH: Nanobeam Lasers
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批准号:1028563
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:2010
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负责人:Russell Dupuis
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依托单位:
NOVEL HIGH-PERFORMANCE III-N HBTS FOR NEXT-GENERATION ENERGY-EFFICIENT SYSTEMS
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批准号:0725736
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项目类别:Standard Grant
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资助金额:$28.16万
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财政年份:2007
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负责人:Russell Dupuis
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依托单位:
Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures
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批准号:0439270
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Russell Dupuis
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依托单位:
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
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批准号:0439616
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Russell Dupuis
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依托单位:
Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices
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批准号:0438111
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Russell Dupuis
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依托单位:
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
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批准号:0115329
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2001
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负责人:Russell Dupuis
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依托单位:
Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices
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批准号:0080630
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项目类别:Continuing Grant
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资助金额:$86.0万
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财政年份:2000
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负责人:Russell Dupuis
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依托单位:
Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures
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批准号:0080409
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项目类别:Continuing Grant
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资助金额:$27.0万
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财政年份:2000
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负责人:Russell Dupuis
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依托单位:
Materials and Processing Research for High-Performance Optoelectronic Devices Employing III-V Compound Semiconductor Native Oxide Layers
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批准号:9612283
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项目类别:Standard Grant
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资助金额:$79.31万
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财政年份:1996
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负责人:Russell Dupuis
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依托单位:
Materials Growth and Processing Research for Wide-Bandgap Semiconductor Heterostructures and Devices
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批准号:9312947
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项目类别:Continuing Grant
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资助金额:$28.53万
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财政年份:1993
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负责人:Russell Dupuis
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依托单位:
海外基金