I-Corps: Tunnel FET-based transistor logic for ultra-low-power applications

I-Corps项目更广泛的影响/商业潜力在于，该项目设备有可能成为下一代超低功耗设备。隧道场效应晶体管（tfet），特别是具有III-V型异质结构的晶体管，是克服金属硅氧化物尺寸和功率缩放问题的优秀候选人。半导体场效应晶体管（MOSFET）。III-V异质结TFET在很短的电压范围内具有高通流和低关流，可以很容易地实现低功耗。III-V材料成为主流的瓶颈之一是缺乏与当前硅制造技术的集成。拟议的设备展示了与硅制造技术兼容的技术，与任何其他III-V材料设备相比，硅制造技术具有最大的商业影响，因为它不需要对现有的制造工艺进行任何更改。通过实现该器件，它将有机会取代目前手机和计算机中现有的FinFET技术，为逻辑应用制造新一代便携式器件，并使物联网应用成为可能。这个I-Corps项目建议使用新颖的制造技术在硅衬底上制造低功率隧道场效应晶体管（ttfet）。该器件采用InAs/AlSb/GaSb结作为隧道结。这种独特的结在栅极偏压的控制下产生有效的电子隧穿调制。隧道势垒AlSb层夹在InAs和GaSb之间。这种结构允许InAs和GaSb之间的自由带运动。这种独特的结与鳍型通道结构相结合，可以通过周围的栅极金属有效地控制有源通道区域。翅片器件结构将允许出色的栅极静电控制，并将其与隧道机构相结合，将使制造的器件实现远小于60mV/dec的亚阈值斜率。该设计方案的另一个独特之处在于采用了非对称的t形源和漏。

The broader impact/commercial potential of this I-Corps project is that the project device has the potential to become the next generation of ultra-low power devices. Tunnel Field Effect Transistors (TFETs), especially those with type III-V heterostructures, are excellent candidates to overcome both size and power scaling issue of Silicon metal?oxide?semiconductor field-effect transistor (Si MOSFET). III-V heterojunction TFET can easily achieve low power consumption by having high on-current and low off-current within a very short range of applied voltage. One of the bottlenecks for III-V materials to become mainstream is the lack of integration with current silicon manufacturing technology. The proposed device demonstrates technology that is compatible with silicon manufacturing technology which has the most commercial impact compared to any other III-V materials devices as it does not require any changes in the existing manufacturing process. By realizing this device, it will open the opportunity to replace the current existing FinFET technology in cellphone and computers, making a new generation of portable devices for logic applications and enabling ever-connected internet of things applications.This I-Corps project proposes to create a low power tunneling field effect transistor (TFET) on a silicon substrate using novel fabrication techniques. The device employs InAs/AlSb/GaSb junction as the tunneling junction. This unique junction produces effective modulation of electron tunneling under control of the applied gate bias. The tunneling barrier AlSb layer is sandwiched between InAs and GaSb. This configuration allows the free band movements between InAs and GaSb. This unique junction is combined with a fin type channel structure to allow effective control over the active channel region by the surrounding gate metals. The fin device architecture will allow excellent gate electro-static control, and combining it with the tunneling mechanism will enable the fabricated devices to achieve a subthreshold slope much smaller than 60mV/dec. Another unique aspect of the proposed design is the use of elevated asymmetric T-shaped source and drain.