Materials World Network: Transport, Switching and Size Effects in the lead-free ferroelectric, BiFeO3

该提案的重点是新的薄膜多铁性材料BiFeOs，同时表现出反铁磁以及铁电性能。由于铁电性质以高剩余极化和高居里温度的形式突出，我们在此建议中专门集中在铁电部分。在90 μ C/cm？加上不含铅，使得这种材料对于铁电非易失性存储器中的应用非常有吸引力，所述铁电非易失性存储器是机电微/纳系统。在BiFeOs进入各种产品之前，仍然存在许多悬而未决的问题。这项建议集中在最重要的问题，包括缩放的BiFeOs到纳米薄膜和纳米尺寸的横向结构。掺杂被认为是一种降低BiFeO的相对高的矫顽场并降低漏电流的方法。与伯克利实验室的先进光源密切合作的新实验将同时进行原子结构和电气特性的研究。伯克利，亚琛和尤利希的专业知识和共同努力将导致我们的第一个NSF-DFG项目取得同样的成功。

This proposal focuses on the novel thin film multiferroic material BiFeOs which simultaneously exhibits anti-ferromagnetic as well ferroelectric properties. Due to the fact that the ferroelectric properties are pronounced in form of a high remnant polarization and high Curie temperature, we concentrate in this proposal exclusively on the ferroelectric part. The high remnant polarization in the order of 90u.C/cm? together with the absent of lead makes this material very attractive for applications in ferroelectric non-volatile memories are mechanical-electrical micro/nano systems. Many open questions still remain before BiFeOs will find its way into various products. This proposal concentrates on the most important issues, including the scaling of BiFeOs into ultrathin films and nano-sized lateral structures. Doping is considered as a way to reduce the relative high coercive filed of BiFeOs and lowers the leakage current. Novel experiments in a close collaboration with the Advanced Light Source at the Berkeley Lab will be performed in which the atomic structure as well as the electrical characteristic is investigated at the same time. The expertise and joint efforts from Berkeley, Aachen and Jülich will lead to the same success achieved in out first NSF-DFG project.