Nanowire-Heterojunction Bipolar Transistor (NW-HBT)

在该项目的第一阶段，首次证明了具有测量电流增益β&lt；1的III/V NPN纳米线核/壳HBT结构对少数粒子的传输。短期内有很大潜力改进已经取得的成果。为此，该项目拟议扩展阶段的工作应侧重于调查可能直接影响当前收益的参数。在这种情况下，所开发的纳米线HBT结构将被用来回答关于材料开发的进一步问题。目前实现的n-InGaP/p-GaAsBe异质结在正向和反向特性方面都具有尚未优化的行为。可能的原因是缺陷密度高，表面和边缘效应对壳面的影响占主导地位。高的Be反向电流是一种可能的机制的指示器，该机制也产生寄生载流子，在晶体管操作期间不能被集电极捕获。拟议的工作计划将侧重于可能有助于在晶体管中产生寄生基极电流的机制。

Within the first phase of the project, a first proof of minority transport by a III / V npn nanowire core / shell HBT structure with measured current gain β < 1 has been achieved. There is high potential in the short term to improve the results already achieved. For this reason, the work in the proposed extension phase of the project should focus on the investigation of the parameters which may directly influence the current gain. In this case, the developed nanowire HBT structure will be used to answer further questions regarding material development.The currently realized n-InGaP / p-GaAs BE-heterodiode has a not yet optimized behavior in terms of both forward and reverse characteristics. Possible reasons are a high defect density and the dominance of surface and edge effects on shell-facets. The high BE reverse current is an indicatior for a possible mechanism which also generates parasitic charge carriers, which can not be captured by the collector during transistor operation. The proposed work program will focus on the mechanisms that may contribute to the generation of parasitic base current in the transistor.