manufacturing of nano pores for handling of a DNA molecule

用120 - 5000 keV的C60离子辐照非晶氮化硅（SiN）薄膜（厚度20 nm），并使用透射电子显微镜（TEM）观察。通过TEM清楚地观察到由辐照产生的离子径迹。对于半定量分析的离子轨迹也观察到使用高角度环形暗场扫描透射电子显微镜。利用高分辨卢瑟福背散射谱测量了540 keV C60离子轰击SiN的溅射产额。产量高达5400。这些结果表明，纳米孔可以直接在SiN膜中产生通过优化的照射条件。

Amorphous silicon nitride (SiN) films (thickness 20 nm) were irradiated with 120 - 5000 keV C60 ions and observed using transmission electron microscopy (TEM). The ion tracks produced by the irradiation were clearly observed by TEM. For semi-quantitative analysis the ion tracks were also observed using high-angle annular dark field scanning transmission electron microscopy. The density of the track was found to be reduced by 30%.The sputtering yield of SiN bombarded with 540 keV C60 ions was measured using high-resolution Rutherford backscattering spectroscopy. The yield is as large as 5400. These results suggest that nano pores may be directly produced in the SiN film by optimizing the irradiation conditions.