CONTROL OF THIN-FILM FORMATION PROCESSES BY MONOLAYER TREATMENTS ON A SURFACE OF SUBSTRATES

我们已经实现了我们的项目的目标，即在各种衬底上形成明确的表面单分子层，并使用单层处理控制薄膜生长过程。处理包括在气相中氢终止硅表面的单原子氧化、氮化和硫化，以及在液态或气相中原子氧化硅表面引入三氟乙氧基。优化了实验条件，如压力、温度和处理周期，以获得均匀的基片上的单分子膜。我们还提出了氢端硅表面H-Si键或Si-Si键氧化的选择规则。这些单层处理控制了化学气相沉积(CVD)形成薄膜的方式。用CVD方法在氢端硅表面沉积钨，而在单原子氮化硅表面不沉积钨。单原子表面处理提供了一种控制薄膜形成过程的方法，这一实验结果被成功地应用于改善工业过程中SiO_2薄膜的形成特性，通过一系列不偏离常规操作程序的操作步骤。CVD成膜过程的初始阶段也容易受到衬底的单色处理的影响。通过对基片进行等离子体溅射处理，将基片上铝核的柱状结构转变为连续膜结构，实现了对基片表面进行单层处理的可控方法，并将其应用于控制薄膜的形成过程。

We have accomplished the purpose of our project that aims both formation of well-defined surface monolayers on various kinds of substrates and control of thin-film growth processes using monolayer treatments. Treatments includes monoatomic oxidation, nitridation, and sulfidation of hydrogen terminated silicon surfaces in vapor phase and introduction of trifluoroetoxyl groups on atomically oxidized silicon surfaces in liquid or vapor phase. Experimental conditions such as pressure, temperature, and treatment period are optimized to achieve uniformity of obtained monolayers on the substrates. We also proposed a selection rule for oxidation of either H-Si bond or Si-Si bond of hydrogen terminated silicon surfaces. These monolayer treatments control the fashion in which thin-films were formed by chemical vapor deposition (CVD). Deposition of tungsten by CVD proceeded on hydrogen terminated silicon surfaces while it does not on monoatomically nitirded silicon surfaces. The experimental result that monoatomic surface treatments provide a way to control thin-film formation processes is successfully applied for improvement of the Si02-film formation characteristics in an industrial process by a series of operation procedures that does not deviate from usual ones. The initial stages of CVD film formation processes are also susceptible to monolater treatment of substrates. The pillar structure of Al nuclear on a substrate was changed to continuous film by plasma sputtering treatment of the substrate.In summary, we have realized the controlled way to perform monolayer treatment of substrate surfaces and applied it for controlling thin film formation processes.