Low Temperature Deposition of TiN Diffusion Barrier Metal for Integrated Circuit by Low Frequency Plasma CVD

Titanium nitride （TiN） films have been used in the fabrication of integrated circuits as a diffusion barrier layer metal.通常， TiN薄膜是由热化学气相沉积（CVD）、等离子体CVD和物理气相沉积或等离子体喷雾方法制成的。However，这些方法需要高温（>600 ° C）来完成沉积物，有时会导致沉积物的热损伤。温度高于550 ° C，材料的热扩散不适合半导体设备也可用作高温。因此，这是很有可能开发出一种使用低温度（<550℃）沉积TiN薄膜的技术来防止热损伤。在我们之前的工作中， TiN films have been deposited on silicon substrates at low substrate temperature （TイイD2 subイD2） （400 - 550） by 50 Hz plasma CVD using a TiClイD24イイD2+NイD22イD2 gas mixture。一个带有两个二极管的基底偏置电路被用来通过离子过程增强沉积物。The Vickers hardness values of the deposited TiN films at TイイD2 subイルD2 ranging from 450 to 550 were above 2200 Hv， and resistively was below 100 cm TイルD2 D2>500。存放的电影的组成是由RBS方法调查的，以确定为.%。value of the Cl content in the TiN films is about 1%at TイイD2 subイエD2=550弧度。XRD spetra revealed that the film has the preferred orientation of？-TiN with （200） and （220） under the deposition condition of T-D2 sub-D2>500？。从这些结果中，发现了一种高质量和统一的TiN电影，它被发现在三个维度的基底表面上，使用两个二极管的50赫兹等离子体CVD。

Titanium nitride (TiN) films have been used in the fabrication of integrated circuits as a diffusion barrier layer metal. Usually, TiN films are produced by deposition with thermal chemical vapor deposition (CVD), plasma CVD and physical vapor deposition or plasma spraying methods. However, these methods require high-temperature (>600℃) substrates to achieve the depositions, which sometimes causes thermal damage to the deposited films. At temperatures above 550℃, thermal diffusion of materials not suitable for semiconductor devices may also occur. Therefore, it is desirable to develop a deposition technique for TiN films using low-temperature (<550℃) substrates to avoid thermal damage. In our previous work, TiN films have been deposited on silicon substrates at low substrate temperature (TィイD2subィエD2) (400℃-550℃) by 50Hz plasma CVD using a TiClィイD24ィエD2+NィイD22ィエD2+HィイD22ィエD2 gas mixture. A substrate bias circuit with two diodes was used to enhance the deposition through ion processes. The Vickers hardness values of the deposited TiN films at TィイD2subィエD2 ranging from 450 to 550℃ were above 2200Hv, and resistively was below 100 μ Ωcm TィイD2subィエD2>500℃. The composition of the deposited films was investigated by the RBS method to determine that the at.% value of the Cl content in the TiN films is about 1% at TィイD2subィエD2=550℃ . XRD spetra revealed that the film has the preferred orientation ofδ -TiN with (200) and (220) under the deposition condition of TィイD2subィエD2>500℃. From these results, it was found that high quality and uniform TiN film was obtained on three-dimensional substrate surface by the 50Hz plasma CVD with a bias circuit using two diodes.