Plasma process technology controlling dissociation of process gas for realizing step-by-step investment semiconductor manufacturing

在本研究中，我们在微波激发等离子体设备中使用新开发的双簇射板结构，开发了创新的等离子体工艺。在微波激发的低电子温度扩散Kr/O2等离子体区引入SiH 4气体，进行了氧化硅CVD工艺。结果，我们获得了界面能级密度为4 × 10 - <10>5eV·<-1>cm-3<-2>、耐压为12或更高MV/cm的氧化硅层，其电学质量几乎与通过热氧化工艺形成的层的电学质量相同。此外，为了进一步实现LSI器件的小型化和高级功能，还发展了利用BED磁控等离子体刻蚀SiO_2绝缘层的技术。然后阐明了通过使用低电子温度的等离子体来节省材料气体的过量解离，可以完全抑制职业失活。对抗蚀剂的选择比为20，刻蚀至0.08 μm时， ...更多信息 在小规模生产线上，需要能及时用工艺气体代替吹扫气体或能及时改变工艺气体成分的供气系统。在本研究中，我们采用气压控制流量控制系统作为气体补充，同时通过调节排气泵二次侧吹扫气体的流量来控制排气速度，实现了在2秒内稳定腔室气体压力和气体成分。由于在几十到几百mTorr的压力范围内排气速度差而需要排出大量气体的高速工艺。本研究通过将泵的转子设计成不等导程、不等倾角螺旋结构，研制了一种新型的后级泵，该泵具有从粘性流到分子流的大压力区的高排气能力。该泵具有无化学反应沉积、免维护、体积小、能耗低等优点，适用于小型生产线。少

In this study, we developed the innovative plasma process by using newly developed dual shower plate structure in the microwave excitation plasma equipment. By introducing SiH_4 gas into the low electron temperature diffusion Kr/O_2 plasma region excited by microwave, silicon oxide CVD process was carried out. As a result, we obtain silicon oxide layer which indicates 4x10^<10> eV^<-1> cm^<-2> of interface level density and 12 or more MV/cm of withstand voltage, whose electric quality is almost as same as that of the layer formed by thermal oxidation process. Moreover, in order to realize further miniaturization of advanced features of an LSI devices, SiO_2 insulator etching technology was developed using BED magnetron plasma. Then it was clarified that career inactivation can be completely suppressed by saving excess dissociation of material gas using the low electron temperature Xe plasma. It was also found that the selectivity ratio against resist was 20 and etching to 0.08 μm were … More possible without micro-loading effect using C_5F_8 gas.In a small-scale production line, the gas supply systems which make it possible to replace purge gas with process gas promptly or to change the process gas composition immediately are required. In this research, we accomplished to stabilize chamber gas pressure and the gas composition within in 2 seconds by adopting a gas pressure control flow rate control system as gas supplement and controlling exhaust gas speed simultaneously by adjusting flow rate of purge gas to a secondary side of exhaust pump.Neither the turbo molecular pump nor back pump currently used for the semiconductor and LCD process equipment fits a high-speed processes which need to exhaust large volume gas because of poor exhaust speed in the pressure range of several ten to several hundred mTorr. In this research, the new back pump which has high exhaust capability for large pressure region from the viscous flow to a molecule flow was developed by making the rotor of a pump into a inequality lead and inequality slope angle screw structure. This pump is quite adequate tor a small-scale production line because of no deposition by chemical reaction, maintenance-free, small size, and low power consumption. Less