STUDY OF INTERCONNECT STRUCTURES FOR ULTR-HIGH-SPEED LSI'S

构建超高速LSI的最基本问题之一是建立一个低抵抗力、高可靠性的金属化计划。我们使用“低动力学-能量粒子过程”，“由此过程产生的铜膜非常低的resistManagement of 1.80。厘米接近等于块。它找到了电影的水晶结构，就像（100）-方向或（111）-方向都可以被选择为仅仅通过控制离子捆绑能量。这部电影在硅晶圆片上基本上生长。Schottky diodes是由沉积的铜薄膜直接形成的（100） Siat Room温度产生理想二进制字符学。事实证明，一种理想的金属半导体接触是可能形成的，而没有任何允许热量循环。SiO_2上的铜薄膜极好的粘附也是在没有任何胶层的情况下实现的。许多更先进的金属化计划也被用于纯铝金属化。该铝片采用最佳条件产生了无喜马拉雅特性，达到500 ° C的退火温度。在更远的地方，一个很好的步骤覆盖在一个小的接触洞里也被发现了。这也发现了MOSFET中没有降级的occurs被用于这种低能量离子轰炸的情况。“建立这种先进的纯铝或铜金属化对超高速、超高密度LSI的未来超高密度的参数重要性。

One of the most essential issues of constructing ultra high speed LSI's is to establish a low-resistivity, high-reliability metalization schem. We have developed abvanced metalization schemes using either pure aluminum films or pure copper films by employing a newly-developed "Low-Kinetic-Energy Particle Process,"The copper films deposited by this process exibited a very low resistivity of 1.80 .cm nearly equal to the bulk resistivity. It was found that the crystal structure of film, such as the (100)-orientation or the (111)-orientation is able to be selected by just controlling the ion-bombardment energy. Such films were epitaxially grown on silicon wafers. The Schottky diodes formed by depositing Cu films directly of n-type (100) Siat room temperature exibited ideal diode characteristics. The fact demonstrates that an ideal metal-semiconductor contact is able to be formed without any alloying heat cycles. Excellent adhesion of Cu films on SiO_2 was also realized by this process without any glue layer inbetween. Much more advanced metalization scheme was also established for pure aluminum metalization. The aluminum films formed with an optimum condition exibited a hillock-free feature up to a 500゜C annealing temperature. Furthermore, a good step coverage at small contact holes is also obtained. It was also found that no degradete occurs in MOSFET's subjected to such low-energy ion bombardment.The establishment of such advanced pure Al or Cu metalization is of paramount importance for future ultra-high speed, ultra-high density LSI's.