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Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications

Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
纳米晶硅中的弹道电子效应及其器件应用
批准号:
15201031
负责人:
KOSHIDA Nobuyoshi
金额:
$28.62万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004

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项目成果

KOSHIDA Nobuyoshi的其他基金

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中文摘要
翻译
从电子输运和发射两个方面研究了纳米晶硅(nc-Si)二极管中弹道电子的产生机制。平板显示和弹道照明应用的一些技术方面也进行了研究,包括与相关热声功能的可能组合。研究结果及意义总结如下:(1)弹道输运分析——通过对低真空和常压下电子发射特性的测量,证实了在nc-Si层中可以有效地产生弹道电子,并且硅纳米结构与弹道发射效率之间存在一定的相关性。利用皮秒宽紫外激光脉冲对nc-Si层飞行时间信号的场和温度依赖关系进行实验分析,发现弹道输运模式的漂移速度和平均自由程显著增大。理论输运分析表明,由于有效变形势的降低,与隧道氧化物互连的nc-Si点链中的电子-声子散射可以被显著抑制。(2)应用研究:采用适当的退火方法减少纳米硅界面的散射损失,大大提高了弹道发射效率和运行稳定性。基于nc-Si发射极的实际优势,在玻璃基板上沉积了多晶硅薄膜,开发了一种简单矩阵驱动的7.6英寸全彩平板显示器。此外,还证明了可以制造固态弹道照明装置。(3)结合相关功能,从技术应用的角度来看,nc-Si器件的可见发光和热致超声发射性能得到了显著提高。-研究了弹道效应、发光和超声发射一体化的基本工艺技术。少
英文摘要
The generation mechanism of ballistic electrons in nanocrystalline silicon(nc-Si) diodes has been studied in terms of electron transport and emission. Some technological aspects for applications to flat panel display and ballistic lighting have also been investigated including possible combination with related thermo-acoustic functions. The results and significances are summarized as follows.(1)Analysis of ballistic transport-It was confirmed from measurements of the electron emission characteristics in either low-vacuum or atmospheric pressure that ballistic electrons are efficiently generated in the nc-Si layer, and that there is a definite correlation between the silicon nanostructure and the ballistic emission efficiency.-From experimental analyses of the field and temperature dependencies of time-of-flight signals for the nc-Si layer using a picoseconds-width UV laser pulse, the ballistic transport mode was detected with a significantly enlarged drift velocity and mean free path.- … More Theoretical transport analyses suggest that electron-phonon scattering in nc-Si dot chains interconnected with tunnel oxides could be significantly suppressed due to a reduction in the effective deformation potential.(2)Application studies-Both the ballistic emission efficiency and the operation stability have been drastically improved by employing an appropriate annealing to reduce scattering losses at nc-Si interfaces.-Based on practical advantages of the nc-Si emitter, a simple-matrix-drive 7.6'' full-color flat panel display has been developed using a polycrystalline silicon film deposited onto a glass substrate. In addition, it has been demonstrated that solid-state ballistic lighting device can be fabricated.(3)Combination with related functions-The visible luminescence and thermally induced ultrasonic emission properties of nc-Si devices were significantly improved in view of technological applications.-Basic process technology was examined towards monolithic functional integration of ballistic effect, luminescence, and ultrasonic emission. Less
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会议论文
B.Gelloz, H.Sano, R.Boukherroub, D.D.M.Wayner, D.J.Lockwood, N.Koshida: "Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds"Appl.Phys.Lett.. 83. 2342-2344 (2003)
B.Gelloz、H.Sano、R.Boukherroub、D.D.M.Wayner、D.J.Lockwood、N.Koshida:“通过受控共价键的表面钝化来稳定多孔硅电致发光”Appl.Phys.Lett.. 83. 2342-2344 (2003
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通讯作者:
A.Kojima, N.Koshida: "An analysis of electron transport in surface-passivated nanocrystalline porous silicon"Jpn.J.Appl.Phys.. 42. 2395-2398 (2003)
A.Kojima、N.Koshida:“表面钝化纳米晶多孔硅中电子传输的分析”Jpn.J.Appl.Phys.. 42. 2395-2398 (2003)
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Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode
平面化纳米晶硅冷阴极的准弹道电子发射
DOI: --
发表时间: 2005
期刊: Materials Research Society Symposium Proceedings 832
影响因子: --
作者: [Y.Tsuchiya, T.Nakatsukasa, H.Mizuta, S.Oda, A.Kojima, N.Koshida]
通讯作者: N.Koshida
Precise thermal characterization of confined nanocrystalline silicon by a 3ω method.
通过 3ω 方法对受限纳米晶硅进行精确热表征。
DOI: --
发表时间: 2005
期刊: Jpn.J.Appl.Phys. 44(In press)
影响因子: --
作者: [T.Kihara, T.Harada, N.Koshida]
通讯作者: N.Koshida
共 28 条
    Applications of nanosiicon ballistic emitter in liquids, gases, and solids
    Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
    Control of physical properties induced in silicon nanostructure and device applications
    • 批准号:
      18063007
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $26.62万
    • 财政年份:
      2006
    • 负责人:
      KOSHIDA Nobuyoshi
    • 依托单位:
    Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display