Controlling of UV light by using III-nitride based photonic crystals with nano-antenna

光子晶体具有与光波长相同或小于光波长的折射率分布。它的周期性能够控制光学常数，如透射，反射率和吸收，或偏振。在本研究中，利用iii -氮化物半导体制备可见光和紫外透明的光子晶体，并在发光器件或探测器上进行了研究，明确了其透射、反射、吸收和偏振特性。此外，通过紫外探测器对紫外光的控制效果进行了验证。在此背景和目的下，我们得到了以下结果：反应离子蚀刻及可见光控制制备GaN和SiO_2纳米针尖。反应离子蚀刻法制备Si金字塔结构3。AlN条纹结构的制备及高品质AlGaN外延层的晶体生长GaN和AlGaN紫外探测器的表征[5]。电子束光刻技术制备纳米有序图案利用电子束光刻技术在聚合物薄膜上制作光栅和LED的平面发光。基于这些结果，我们相信高性能紫外LED和控制紫外光的紫外探测器是可以实现的。

Photonic crystals have the distribution of index which is as same as light wavelength or smaller than light wavelength. Its periodicity is able to control optical constant such as transmission, reflectance and absorption, or polarization. In this research, the fabrication of photonic crystas with III-nitride semiconductors, which is transparent for visible and ultraviolet and studied on light emitting devices or detectors, and the characteristics of transmission, reflectance, absorption and polarization are cleared. Furthermore, the effect of controlling of UV light is confirmed by UV detectors.Under the backgrounds and purposes, we obtained the following results.1. Fabrication of nanotips of GaN and SiO_2 by using reactive ion etching and controlling of visible light2. Fabrication of pyramid structure of Si by using reactive ion etching3. Fabrication of stripe structure of AlN and crystal growth of high quality AlGaN epitaxial layers4. Characterization of GaN and AlGaN UV detectors5. Fabrication of nano order pattern by using electron beam lithography6. Fabrication of gratings on polymer films by using electron beam lithography and plane light emitting of LEDBased on these results, we believe that high performance UV LED and UV detectors with controlling UV light can be realized.