Low Power Multivalued Nonvolatile Static Random Access Memory

我提出了一种使用ReRAM的多值、非易失性SRAM并进行了计算分析。两个参考电阻和一个可编程电阻连接到标准SRAM单元的存储节点。提出的9T3R MNV-SRAM单元可以存储2比特的存储器。在存储操作中，可以同时执行调用操作和是否需要写入脉冲的连续判定操作。因此，在使用所提出的方案时，不需要判决操作和电路的持续时间。为了实现稳定的召回操作，在电源接通之前向电池施加一定的电流(或电压)。为了研究工艺变化容忍度和编程电阻的精度，我们用180 nm 3.3V的CMOSHSPICE器件模型模拟了MNV-SRAM单元晶体管宽度、可编程电阻的电阻和电源电压的变化对器件性能的影响。

I proposed and computationally analyzed a multivalued, nonvolatile SRAM using a ReRAM. Two reference resistors and a programmable resistor are connected to the storage nodes of a standard SRAM cell. The proposed 9T3R MNV-SRAM cell can store 2 bits of memory. In the storing operation, the recall operation and the successive decision operation of whether or not write pulse is required can be performed simultaneously. Therefore, the duration of the decision operation and the circuit are not required when using the proposed scheme. In order to realize a stable recall operation, a certain current (or voltage) is applied to the cell before the power supply is turned on. To investigate the process variation tolerance and the accuracy of programmed resistance, we simulated the effect of variations in the width of the transistor of the proposed MNV-SRAM cell, the resistance of the programmable resistor, and the power supply voltage with 180nm 3.3V CMOS HSPICE device models.