Development of STM operational in a plasma and its application to a control of plasma materials surface processing on an atomic scale
Development of STM operational in a plasma and its application to a control of plasma materials surface processing on an atomic scale
批准号:
09555215
负责人:
TERASHIMA Kazuo
金额:
$6.14万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
在这个项目中,我们首次尝试开发用于等离子体环境下的扫描隧道显微镜(STM)。该装置由一个STM系统和一个射频(RF)(430 MHz)等离子体产生系统组成,该系统安装在带有旋转泵的真空室中。一种分辨率为10毫微微安培的特殊放大器。隧道电流测量最高可达1KV。为了防止来自等离子体的噪声电流,铂-Ir探头尖端使用溶胶凝胶法涂上环氧脂和中空玻璃,但在大约3微米的尖端周围除外。在常规辉光等离子体条件下,经过1800秒的等离子体曝光,等离子体产生的噪声电流小于0.1nA。利用该装置,在射频、低压(0.3Tbrr)空气辉光等离子体下获得了高定向热解石墨(HOPG)的纳米级台阶结构和原子图像。我们还讨论了STM提示对于成功的、现实的“原位”观察的作用。
英文摘要
In this project, we performed the first attempt at the development of a scanning tunneling microscope (STM) for use under a plasma environment. The apparatus consists of an STM system and a radio-frequency (rf) (430MHz) plasma generation system housed in a vacuum chamber with a rotary pump. A special amplifier with a resolution of 10 femtoamp. up to 1kV is employed for tunneling current measurements. To prevent noise current from the plasma, the Pt-Ir probe tip is coated with epoxy grease and insulated glass using the sol-gel method except around its apex of about 3 mum. Under the conventional glow-plasma condition, the noise current from the plasma was deduced to be less than 0.1 nA during plasma exposure for 1800 sec. Using this apparatus, the step structure on a nanometer scale and atomic image of highly oriented pyrolytic graphite (HOPG) were obtained under rf, low-pressure (0.3 Tbrr) air glow plasma. We also discussed the role of the STM tip for successful, realistic "in situ" observation.
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Y.Takamura, K.Hayasaki, K.Terashima, T.Yoshida: "Claster size measurement using microtrench method in a thermal plasma flash evaporation process." J.Vac.Sci.Technol.B. Vol15,N3. 558-565 (1997)
Y.Takamura、K.Hayasaki、K.Terashima、T.Yoshida:“在热等离子体闪蒸工艺中使用微沟槽方法测量碎石尺寸。”
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K.Terashima: "HIGH RATE DEPOSITION OF THICK EPITAXIAL FILMS BY THERMAL PLASMA FLASH DEPOSITION" Pure and Applied Chemistry. 70/6. 1193-1197 (1998)
K.Terashima:“通过热等离子体闪光沉积实现厚外延薄膜的高速率沉积”纯粹与应用化学。
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服部 伴之: "ホットクラスターエピタキシーによる高温超伝導体YBCO厚膜作製" 日本金属学会誌. 63/1. 68-73 (1999)
Tomoyuki Hattori:“通过热团簇外延制备高温超导体 YBCO 厚膜”,日本金属学会杂志 63/1(1999)。
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K.Terashima: "Scanning tunneling microscopy operating under a plasma environment" Thin Solid Films. (印刷中). (1999)
K.Terashima:“在等离子体环境下运行的扫描隧道显微镜”薄固体薄膜(1999 年出版)。
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服部伴之: "ホットクラスターエピタキシーによる高温超伝導体YBCO厚膜作製" 日本金属学会誌. 63・11. 68-73 (1999)
Tomoyuki Hattori:“通过热簇外延法制造高温超导体YBCO厚膜”日本金属学会杂志63・11(1999)。
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共 9 条
Creation of cryoplasma materials process science
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批准号:24246120
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Development of novel materials surface modification/fabricationTechnology with a use of supercritical fluid ion beam
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Generation of ccryoplasma and its application to materials processing
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财政年份:2009
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Creation of solution plasma controlled in nano space and Its application to materials processing
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批准号:19360326
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$13.06万
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财政年份:2007
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负责人:TERASHIMA Kazuo
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Establishment of innovational materials surface treatment / modification technology with using supercritical cluster plasma fluid
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批准号:17360349
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项目类别:Grant-in-Aid for Scientific Research (B)
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财政年份:2005
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负责人:TERASHIMA Kazuo
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Establishment of novel materials surface treatment/modification technology with using supercritical fluid plasma beam
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批准号:15360380
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资助金额:$9.86万
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财政年份:2003
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负责人:TERASHIMA Kazuo
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依托单位:
Application of microplasma to materials device process
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批准号:15075202
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$53.38万
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财政年份:2003
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负责人:TERASHIMA Kazuo
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依托单位:
Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip
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批准号:12555185
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.58万
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财政年份:2000
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负责人:TERASHIMA Kazuo
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依托单位:
Establishment of novel microscale surface treatment/processing technology with ultra-small plasma beam
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批准号:12450288
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.6万
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财政年份:2000
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负责人:TERASHIMA Kazuo
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依托单位:
Development of SPM operational in a plasma environmental and its application to the nano-scopic structural study of solid-plasma interface
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批准号:10450231
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资助金额:$8.7万
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财政年份:1998
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负责人:TERASHIMA Kazuo
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依托单位:
Developmene of micro/nanoscale plasma generator and its application to materialn process
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批准号:07555513
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$2.43万
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财政年份:1995
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负责人:TERASHIMA Kazuo
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依托单位:
Development of nano-scale processing with the tunneling electrons from a scanning tunneling microscope (STM) under atmospheric or reduced pressure
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批准号:03650539
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1991
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负责人:TERASHIMA Kazuo
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依托单位:
海外基金