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HERMES: High dEnsity Silicon GeRManium intEgrated photonicS

HERMES: High dEnsity Silicon GeRManium intEgrated photonicS
HERMES:高密度硅锗集成光子学
批准号:
EP/K02423X/1
负责人:
Frederic Gardes
金额:
$12.76万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2013
资助国家:
英国
项目状态:
已结题
起止时间:
2013 至 --

项目摘要

项目成果

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中文摘要
翻译
Hermes的目标是实现GE和GeSI材料平台,该平台将主要旨在维持光互连电路,以满足摩尔定律在2020年后继续存在的密度、数据速率和功耗要求。ITRS路线图显示,2020年后微处理器输入/输出所需的电子管脚数量已饱和,按当前技术计算约为3000个。这种不断增加的延迟和有限的片上时钟速度的饱和是高密度光互连必须缓解的瓶颈。为了达到ITRS 2020年的目标,目标是超过100TB/S的片外IO能力和整个光链路的功耗约为100fJ/bit。本工作提出了一种解决这一问题的方案,并提供了一种新的制造方法来超越标准平面硅光电子电路的能力。为此,我们的目标是开发一种基于绝缘体上局域Ge/Si化合物的多层光学平台,与基于微米级腔的结构的制造兼容,从而实现调制器和探测器等设备。基于III/V材料或掺杂Ge的激光光源的增长也是可以预见的,但这超出了本提案的范围。拟议的平台将建立一种制造和演示微米级光学器件的方法,适合满足芯片上光学互连所需的超大规模光学集成所需的3维、高密度、低电压和低电容要求。
英文摘要
HERMES is aimed at realising a Ge and GeSi material platform that will be aimed primarily at sustaining optical interconnect circuits to meet the density, data rate and power consumption requirements for the continuation of Moore's law beyond 2020. The ITRS roadmap shows a saturation of the number of electrical pins required for input/output on microprocessors beyond 2020 to about 3000 with current technology. This saturation with an ever increasing latency and a limited on-chip clock speed is a bottle neck that high density optical interconnects have to alleviate. To meet the ITRS 2020 goals the target is clear, with over 100 Tb/s off chip IO capability and power consumption for an entire optical link on the order of 100fJ/bit.This work proposes a solution to this problem and provides a novel means of fabrication to go beyond the capabilities of standard planar silicon photonics circuits. To do so we aim to develop a multilayer optical platform based on localised Germanium/Silicon compounds on insulator compatible with the fabrication of micrometre sized cavity based structures enabling devices such as modulators and detectors. The growth of laser sources based on III/V materials or doped Germanium could also be envisioned but this is beyond the scope of this proposal. The proposed platform will establish a means to fabricate and demonstrate micrometre scale optical devices fit to tackle the 3 dimensional, high density, low voltage and low capacitance requirements needed for very large scale optical integration necessary for optical on chip interconnects.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
DOI: 10.1063/1.5066996
发表时间: 2019-04
期刊: Applied Physics Letters
影响因子: 4
作者: [M. Clementi;K. Debnath;M. Sotto;A. Barone;A. Khokhar;T. D. Bucio;S. Saito;F. Gardes;D. Bajoni;M. Galli]
通讯作者: M. Clementi;K. Debnath;M. Sotto;A. Barone;A. Khokhar;T. D. Bucio;S. Saito;F. Gardes;D. Bajoni;M. Galli
DOI: 10.1364/ol.43.001251
发表时间: 2018-03-15
期刊: OPTICS LETTERS
影响因子: 3.6
作者: [Bucio, Thalia Dominguez, Khokhar, Ali Z., Gardes, Frederic Y.]
通讯作者: Gardes, Frederic Y.
Single Crystal SiGe-on-insulator
绝缘体上单晶硅锗
DOI: --
发表时间: 2015
期刊:
影响因子: --
作者: [C. G. Littlejohns]
通讯作者: C. G. Littlejohns
Harmonic Generation in Silicon Rich Nitride Photonic Crystal Cavities
富硅氮化物光子晶体腔中的谐波产生
DOI: 10.1364/cleo_si.2018.stu3f.2
发表时间: 2018
期刊:
影响因子: --
作者: [Clementi M]
通讯作者: Clementi M
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