Reactive Ion Etching in VHF Diode Reactors

VHF 二极管反应器中的反应离子蚀刻

• 批准号: 9419440
• 负责人: Daniel Murnick
• 金额: $ 28.71万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-04-15 至 1998-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9419440&HistoricalAwards=false
• 关键词: Reactive; Ion; Etching; VHF; Diode

Abstract Murnick CTS-9419440 The primary objective of the proposed work is to determine the effectiveness of a VHF diode reactor for reactive ion etching of silicon in CF4 plasmas. The PI's point out that operation at VHF ( 30-300 MHz) frequencies rather than at the standard 13.56 MHz, at least in the case of amorphous silicon deposition, can result in increased deposition rates, reduced damage, and increased film uniformity. The PI's expect the discharge physics to be quite different in the VHF regime as compared to the standard 100 KHz-13.56 MHz range and provide some evidence for this from results of their previous work. They point out that VHF operation has not as yet been applied to etching, and propose to determine etch rates, uniformity, anisotropy and damage for the etching of silicon in CF4 plasmas. Frequencies from 13.56 to 135 MHz, pressures from 1 to 50 mTorr, and a wide range of applied voltages will be employed. If possible, plasma conditions which optimize certain aspects of the etch process will be identified. Diagnostics on the etched materials will be carried out in collaboration with the Army Research Laboratory conveniently located at Fort Monmouth, using standard surface techniques including SEM, profilometry, and TEM. Use will also be made of ARL's microwave interferometer, currently on loan to Rutgers, to measure absolute, spatially averaged plasma densities. Meta-stable argon populations will also be measured using a line-of sight self-absorption technique. The PI's also propose to collaborate with Dr. Meya Meyyappan of Scientific Research Associates in the modeling of the experimental plasmas. He hopes to provide the PI's with a 2-D version of his current 1-D plasma simulation code and will assist in the modeling effort in order to provide support for the interpretation of the etching results.

摘要 Murnick CTS-9419440 这项工作的主要目的是确定 VHF 二极管反应器在 CF4 等离子体中对硅进行反应离子蚀刻的有效性。 PI 指出，至少在非晶硅沉积的情况下，在 VHF（30-300 MHz）频率而不是标准 13.56 MHz 频率下操作可以提高沉积速率、减少损坏并提高薄膜均匀性。 PI 预计 VHF 范围内的放电物理现象与标准 100 KHz-13.56 MHz 范围相比有很大不同，并从他们之前的工作结果中提供了一些证据。 他们指出，VHF 操作尚未应用于蚀刻，并建议确定 CF4 等离子体中硅蚀刻的蚀刻速率、均匀性、各向异性和损伤。 将采用 13.56 至 135 MHz 的频率、1 至 50 mTorr 的压力以及各种外加电压。 如果可能的话，将确定优化蚀刻工艺的某些方面的等离子体条件。 蚀刻材料的诊断将与位于蒙茅斯堡的陆军研究实验室合作，使用标准表面技术，包括 SEM、轮廓测量法和 TEM。 还将使用目前借给罗格斯大学的 ARL 微波干涉仪来测量绝对的空间平均等离子体密度。 亚稳态氩气数量也将使用视线自吸收技术进行测量。 PI 还提议与科学研究协会的 Meya Meyyappan 博士合作，对实验等离子体进行建模。 他希望向 PI 提供当前一维等离子体模拟代码的二维版本，并协助建模工作，以便为蚀刻结果的解释提供支持。