Reactive Ion Etching in VHF Diode Reactors

VHF 二极管反应器中的反应离子蚀刻

• 批准号: 9419440
• 负责人: Daniel Murnick
• 金额: $ 28.71万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-04-15 至 1998-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9419440&HistoricalAwards=false
• 关键词: Reactive; Ion; Etching; VHF; Diode

Abstract Murnick CTS-9419440 The primary objective of the proposed work is to determine the effectiveness of a VHF diode reactor for reactive ion etching of silicon in CF4 plasmas. The PI's point out that operation at VHF ( 30-300 MHz) frequencies rather than at the standard 13.56 MHz, at least in the case of amorphous silicon deposition, can result in increased deposition rates, reduced damage, and increased film uniformity. The PI's expect the discharge physics to be quite different in the VHF regime as compared to the standard 100 KHz-13.56 MHz range and provide some evidence for this from results of their previous work. They point out that VHF operation has not as yet been applied to etching, and propose to determine etch rates, uniformity, anisotropy and damage for the etching of silicon in CF4 plasmas. Frequencies from 13.56 to 135 MHz, pressures from 1 to 50 mTorr, and a wide range of applied voltages will be employed. If possible, plasma conditions which optimize certain aspects of the etch process will be identified. Diagnostics on the etched materials will be carried out in collaboration with the Army Research Laboratory conveniently located at Fort Monmouth, using standard surface techniques including SEM, profilometry, and TEM. Use will also be made of ARL's microwave interferometer, currently on loan to Rutgers, to measure absolute, spatially averaged plasma densities. Meta-stable argon populations will also be measured using a line-of sight self-absorption technique. The PI's also propose to collaborate with Dr. Meya Meyyappan of Scientific Research Associates in the modeling of the experimental plasmas. He hopes to provide the PI's with a 2-D version of his current 1-D plasma simulation code and will assist in the modeling effort in order to provide support for the interpretation of the etching results.

摘要Murnick CTS-9419440 所提出的工作的主要目标是确定的VHF二极管反应器的有效性，在CF 4等离子体中的硅的反应离子蚀刻。 PI指出，至少在非晶硅沉积的情况下，在VHF（30-300 MHz）频率而不是标准13.56 MHz下操作可以提高沉积速率、减少损坏并提高薄膜均匀性。 PI的预期放电物理是相当不同的VHF制度相比，标准的100 KHz-13.56 MHz的范围，并提供了一些证据，这从他们以前的工作结果。 他们指出，VHF操作尚未应用于蚀刻，并建议确定蚀刻速率，均匀性，各向异性和损伤的CF 4等离子体中的硅蚀刻。 将采用13.56至135 MHz的频率、1至50 mTorr的压力和宽范围的施加电压。 如果可能的话，将确定优化蚀刻工艺某些方面的等离子体条件。 对蚀刻材料的诊断将与便利地位于蒙茅斯堡的陆军研究实验室合作进行，使用标准的表面技术，包括SEM、轮廓测量法和TEM。 还将使用ARL的微波干涉仪，目前借给罗格斯大学，以测量绝对的，空间平均等离子体密度。 亚稳态氩种群也将使用视线自吸收技术进行测量。 PI还建议与科学研究协会的Meya Meyyappan博士合作，建立实验等离子体的模型。 他希望为PI提供他目前的1-D等离子体模拟代码的2-D版本，并将协助建模工作，以便为蚀刻结果的解释提供支持。