Electron Beam Curing and Planarization of Spin-on Glass

这项研究是为了研究新的电子束产生，以实现更窄的电子能量分布和低角度的束流扩散。当辐照的薄膜是电绝缘时，正离子撞击导致薄膜表面的二次发射，导致薄膜中的净电荷积累。然而，当束电子撞击薄膜表面时，产生的二次电子发射实际上有助于表面的电荷中和。在这些研究活动中，这两个基本问题对低k聚合物和玻璃薄膜的新束流固化工艺具有重要意义。在ULSI制造中，多电平互连的寄生电容现在限制了电路速度。如果能将层间介质薄膜的相对介电常数(K)降低到3以下，就可以克服这一限制。

This research is to investigate new electron beam generation for achieving a narrower electron energy distribution and low angular beam spread. When the irradiated film is electrically insulating, positive ion impingement results in secondary emission from the film surface, resulting in a net charge build up in the film. However, when beam electrons impinge on the film surface, the resulting secondary electron emission actually aids in charge neutralization of the surface. These two fundamental issues are of importance to the new beam curing process for low k polymer and glass films in these research activities. In ULSI fabrication the parasitic capacitance of multi-level interconnects now limits circuit speed. If the relative dielectric constant (k) of interlevel dielectric films can be reduced below 3, this limitation can be overcome.