Electron Beam Curing and Planarization of Spin-on Glass

本研究旨在探讨一种新的电子束产生方法，以获得较窄的电子能量分布和较低的电子束角展度。当被照射的膜是电绝缘的时，正离子撞击导致从膜表面的二次发射，导致在膜中的净电荷积累。 然而，当束电子撞击在膜表面上时，所产生的二次电子发射实际上有助于表面的电荷中和。 这两个基本问题是重要的，在这些研究活动中的低k聚合物和玻璃膜的新的光束固化工艺。 在ULSI制造中，多级互连的寄生电容现在限制了电路速度。 如果层间介质膜的相对介电常数（k）可以降低到3以下，则可以克服这种限制。

This research is to investigate new electron beam generation for achieving a narrower electron energy distribution and low angular beam spread. When the irradiated film is electrically insulating, positive ion impingement results in secondary emission from the film surface, resulting in a net charge build up in the film. However, when beam electrons impinge on the film surface, the resulting secondary electron emission actually aids in charge neutralization of the surface. These two fundamental issues are of importance to the new beam curing process for low k polymer and glass films in these research activities. In ULSI fabrication the parasitic capacitance of multi-level interconnects now limits circuit speed. If the relative dielectric constant (k) of interlevel dielectric films can be reduced below 3, this limitation can be overcome.