Electron Beam Curing and Planarization of Spin-on Glass

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This research is to investigate new electron beam generation for achieving a narrower electron energy distribution and low angular beam spread. When the irradiated film is electrically insulating, positive ion impingement results in secondary emission from the film surface, resulting in a net charge build up in the film. However, when beam electrons impinge on the film surface, the resulting secondary electron emission actually aids in charge neutralization of the surface. These two fundamental issues are of importance to the new beam curing process for low k polymer and glass films in these research activities. In ULSI fabrication the parasitic capacitance of multi-level interconnects now limits circuit speed. If the relative dielectric constant (k) of interlevel dielectric films can be reduced below 3, this limitation can be overcome.