U.S Japan Long Term Visit: Photon and Reactive Gas AssistedHeteroepitaxy of III-V and II-VI Optoelectronic Films

美日长期出访：光子与活性气体辅助III-V、II-VI光电薄膜异质外延

• 批准号: 9007937
• 负责人: George Collins
• 金额: $ 17.7万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-06-01 至 1993-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9007937&HistoricalAwards=false
• 关键词: U.S; Japan; Long; Term; Visit

Under this award Professor George Collins of the Department of Electrical Engineering, Colorado State University (CSU), will spend twelve months in Japan, commencing in May 1991, at the Research Laboratory of Engineering Materials, Tokyo Institute of Technology (TIT), where he will work with Professor Hideomi Koinuma on developing information relevant to the epitaxial growth of compound semiconductor films at reduced temperature. The research will employ a near afterglow H2 plasma source developed at Colorado State University, which will be placed in an existing Tokyo University OMCVD reactor to achieve epitaxial films of GaAs on ZnSe and Si, while the ZnSe will be deposited on GaAs. The feedstock precursors will be limited to only organ metallic gases of methyl and ethyl compounds. Near afterglow OMVD has hither to been largely unexplored despite its capability to provide a lower deposition temperature; in-situ H2 plasma cleaning of substrate prior to growth; in-situ hydride and hydride radical (e.g. AsH2, AsH, etc.) generation; and lower residual carbon both at interfaces and in bulk films. The role of the hydrogen will be delineated for both gas phase OMCVD reactions, formation of AsHx radicals, as well as carbon gasification reactions via mass spectroscopic deuterium isotope tracer studies. All gas phase studies will be correlated to deposited film properties material characterization at Tokyo University will emphasize: photoluminescence, double crystal x- ray diffraction and SIMS.

在这个奖项下，教授乔治柯林斯的部门， 科罗拉多州立大学（CSU）电气工程专业将 在日本度过12个月，从1991年5月开始， 东京工业大学工学材料研究室 技术（TIT），在那里他将与教授秀臣 Koinuma关于开发与外延相关的信息 在降低的温度下生长化合物半导体膜。 该研究将采用近余辉H2等离子体源 在科罗拉多州立大学开发，将被放置在 现有的东京大学OMCVD反应堆，以实现外延 在ZnSe和Si上的GaAs薄膜，而ZnSe将沉积在 砷化镓。 原料前体将仅限于器官 甲基和乙基化合物的金属气体。 近余辉 尽管OMVD有能力，但它在很大程度上尚未被开发 以提供较低的沉积温度;原位H2等离子体 在生长之前清洁衬底;原位氢化物和 氢化物自由基（例如AsH 2、AsH等）代;和较低 界面和体膜中的残余碳。 的作用 的氢气将被描绘为气相OMCVD 反应，形成AsHx自由基，以及碳 氘同位素质谱气化反应 示踪剂研究 所有气相研究将与 淀积薄膜特性在东京的材料特性 大学将强调：光致发光，双晶x- 射线衍射和西姆斯。