U.S Japan Long Term Visit: Photon and Reactive Gas AssistedHeteroepitaxy of III-V and II-VI Optoelectronic Films

根据这一奖项，科罗拉多州立大学(CSU)电机系的George Collins教授将从1991年5月开始在日本东京工业大学(TIT)工程材料研究实验室工作12个月，在那里他将与小沼秀美教授合作，开发与化合物半导体薄膜在低温下外延生长相关的信息。这项研究将使用科罗拉多州立大学开发的近余辉氢等离子体源，将其放置在东京大学现有的OMCVD反应器中，以实现在ZnSe和Si上外延GaAs膜，而在GaAs上沉积ZnSe。原料前体将仅限于甲基和乙基化合物的有机金属气体。尽管近余辉OMVD能够提供较低的沉积温度；生长前衬底的原位氢气等离子体清洗；原位氢化物和氢化物自由基(如AsH2、灰烬等)，但到目前为止，OMVD在很大程度上仍未被探索。产生量；界面和块体薄膜中的残碳量都较低。氢在气相OMCVD反应、AsHx自由基的形成以及碳气化反应中的作用将通过质谱仪中的氚同位素示踪研究来描述。所有气相研究都将与沉积薄膜的性能相关，东京大学的材料表征将重点放在：光致发光、双晶X射线衍射和SIMS。

Under this award Professor George Collins of the Department of Electrical Engineering, Colorado State University (CSU), will spend twelve months in Japan, commencing in May 1991, at the Research Laboratory of Engineering Materials, Tokyo Institute of Technology (TIT), where he will work with Professor Hideomi Koinuma on developing information relevant to the epitaxial growth of compound semiconductor films at reduced temperature. The research will employ a near afterglow H2 plasma source developed at Colorado State University, which will be placed in an existing Tokyo University OMCVD reactor to achieve epitaxial films of GaAs on ZnSe and Si, while the ZnSe will be deposited on GaAs. The feedstock precursors will be limited to only organ metallic gases of methyl and ethyl compounds. Near afterglow OMVD has hither to been largely unexplored despite its capability to provide a lower deposition temperature; in-situ H2 plasma cleaning of substrate prior to growth; in-situ hydride and hydride radical (e.g. AsH2, AsH, etc.) generation; and lower residual carbon both at interfaces and in bulk films. The role of the hydrogen will be delineated for both gas phase OMCVD reactions, formation of AsHx radicals, as well as carbon gasification reactions via mass spectroscopic deuterium isotope tracer studies. All gas phase studies will be correlated to deposited film properties material characterization at Tokyo University will emphasize: photoluminescence, double crystal x- ray diffraction and SIMS.